PXAC200902FC V1

High Power RF LDMOS FET, 90 W, 28 V, 1805 – 2170 MHz

ParametricPXAC200902FC V1
Flange TypeEarless
MatchingI/O
Frequency Band  min  max1805.0MHz  2170.0MHz
P1dB90.0W
Supply Voltage28.0V
Pout15.0W
Gain17.2dB
Test SignalWCDMA
Sales Product NamePXAC200902FC V1
OPNPXAC200902FCV1R2XTMA1
Product Statusactive and preferred
Package NameH-37248-4
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size250
Packing TypeTAPE & REEL
OPNPXAC200902FCV1R0XTMA1
Product Statusactive and preferred
Package NameH-37248-4
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size50
Packing TypeTAPE & REEL
Summary of Features:
  • Broadband internal input and output matching
  • Asymmetric Doherty design - Main: P 1dB = 35 W Typ - Peak: P 1dB = 55 W Typ
  • Typical CW performance, 1920 MHz, 26 V  - Output power at P 1dB = 50 W - Efficiency = 58% - Gain = 16.6 dB
  • Capable of handling 10:1 VSWR @28 V, 90 W (CW) output power
  • Integrated ESD protection
  • ESD Rating: Human Body Model, Class 1C (per ANSI/ESDA/JEDEC JS-001)
  • Low thermal resistance
  • Pb-free and RoHS compliant
  • Package: H-37248-4, earless
Data Sheet
TitleSizeDateVersion
PXAC200902FC DS,EN418 KB11 二月 201602_01
Reference Design
TitleSizeDateVersion
PXAC200902FC RDEN455 KB02 六月 201601_01
EN PXAC200902FC+V1
EN PXAC200902FC+V1