PXAC201202FC V2

Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz

ParametricPXAC201202FC V2
Flange TypeEarless
MatchingI/O
Frequency Band  min  max1800.0MHz  2200.0MHz
P1dB120.0W
Supply Voltage28.0V
Pout16.0W
Gain17.0dB
Test SignalWCDMA
Sales Product NamePXAC201202FC V2
OPNPXAC201202FCV2XWSA1
Product Statusactive and preferred
Package NameH-37248-4
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size50
Packing TypeBLISTER TRAY
OPNPXAC201202FCV2R0XTMA1
Product Statusactive and preferred
Package NameH-37248-4
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size50
Packing TypeTAPE & REEL
Summary of Features:
  • Asymmetric Doherty design:  - Main = 35 W Typ (P1dB)  - Peak = 80 W Typ (P1dB)
  • Broadband internal matching
  • CW performance in a Doherty configuration, 1805 MHz, 28 V - Output power = 100 W P1dB - Gain = 17.3 dB at 17.8 W Avg. - Efficiency = 46% at 17.8 W Avg.
  • CW performance in a Doherty configuration, 2100 MHz, 28 V - Output power = 15.8 W Avg. - Gain = 15.5 dB - Efficiency = 46%
  • Capable of handling 10:1 VSWR @ 28 V, 16 W (CW) output power
  • Integrated ESD protection, HBM Class 1C (per JESD22-A114)
  • Low thermal resistance
  • Pb-free and RoHS-compliant
Data Sheet
TitleSizeDateVersion
PXAC 201202FC V2,EN196 KB25 八月 201405_00
Product Brochure
TitleSizeDateVersion
Infineon-RFP Product Selection GuideEN718 KB24 五月 201505_00
Package Data
TitleSizeDateVersion
H-37248-4-1 | PXAC201202FCV2XWSA1EN344 KB11 四月 201601_00
Development Tools
TitleSizeDateVersion
PXAC201202FC-V2 RD139 KB27 二月 201401_00
EN PXAC201202FC+V2
EN where-to-buy
EN PXAC201202FC+V2
PXAC201202FC-V2 RD PXAC201202FC+V2