PXAC210552FC V1

High Power RF LDMOS FET, 55 W, 28 V, 1805 – 2170 MHz

ParametricPXAC210552FC V1
Flange TypeEarless
MatchingI/O
Frequency Band  min  max1805.0MHz  2170.0MHz
P1dB55.0W
Supply Voltage28.0V
Pout7.9W
Gain17.2dB
Test SignalWCDMA
Sales Product NamePXAC210552FC V1
OPNPXAC210552FCV1R0XTMA1
Product Statusactive and preferred
Package NameH-37248-4
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size50
Packing TypeTAPE & REEL
OPNPXAC210552FCV1R2XTMA1
Product Statusactive and preferred
Package NameH-37248-4
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size250
Packing TypeTAPE & REEL
Summary of Features:
  • Broadband internal matching
  • Asymmetric Doherty design - Main : P 1dB = 20 W Typ - Peak : P 1dB = 35 W Typ
  • CW performance, 2170 MHz, 26 V, - Output power at P 1dB = 27 W - Gain = 17 dB - Efficiency = 59%
  • Integrated ESD protection
  • ESD Rating: Human Body Model, Class 1B (per ANSI/ESDA/JEDEC JS-001)
  • Capable of handling 10:1 VSWR @28 V, 55 W (CW) output power
  • Low thermal resistance
  • Pb-free and RoHS compliant
  • Package: H-37248-4, earless
Data Sheet
TitleSizeDateVersion
PXAC210552FC DS,EN199 KB04 十二月 201502_00
Reference Design
TitleSizeDateVersion
PXAC210552FC RDEN198 KB02 六月 201601_00
EN PXAC210552FC+V1
EN PXAC210552FC+V1