PXFC193808SV V1

High Power RF LDMOS FET 380 W, 28 V, 1805 – 1880 MHz

ParametricPXFC193808SV V1
Flange TypeSurface Mount
MatchingI/O
Frequency Band  min  max1805.0MHz  1880.0MHz
P1dB380.0W
Supply Voltage28.0V
Pout80.0W
Gain21.0dB
Test SignalWCDMA
Sales Product NamePXFC193808SV V1
OPNPXFC193808SVV1XWSA1
Product Statusactive and preferred
Package NameH-37275G-6
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size35
Packing TypeBLISTER TRAY
Summary of Features:
  • Broadband internal input and output matching
  • Typical pulsed CW performance, 1842.5 MHz, 28 V - Output power at P1dB = 380 W - Efficiency = 54.9% - Gain = 21 dB
  • Integrated ESD protection
  • ESD: Human Body Model, Class 2 (per ANSI/ESDA/JEDEC JS-001)
  • Capable of handling 10:1 VSWR @28 V, 200 W(1-C WCDMA) output power
  • Low thermal resistance, Pb-free and RoHS compliant
Data Sheet
TitleSizeDateVersion
PXFC193808SV,EN189 KB11 三月 201502_01
Product Brochure
TitleSizeDateVersion
Infineon-RFP Product Selection GuideEN718 KB24 五月 201505_00
Reference Design
TitleSizeDateVersion
PXFC193808SV RDEN151 KB10 三月 201501_00
Package Data
TitleSizeDateVersion
H-37275G-6/2-1 | PXFC193808SVV1XWSA1EN344 KB11 四月 201601_00
EN PXFC193808SV+V1
EN where-to-buy
EN PXFC193808SV+V1
EN PXFC193808SV+V1