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PXFC211507SC V1 R250

High Power RF LDMOS FET 150W, 28V, 2110 – 2170MHz

• Broadband internal input and output matching • Typical Pulsed CW performance, 2170 MHz, 28 V, 10 μs pulse width, 10% duty cycle - Output power at P1dB = 150 W - Efficiency = 56% - Gain = 19 dB • Typical single-carrier WCDMA performance, 2170 MHz, 28 V, 8 dB PAR @ 0.01% CCDF, Test Model 1 with 64DPCH - Output power = 32 W - Efficiency = 32% - Gain = 20 dB • Capable of handling 10:1 VSWR @28 V, 150 W (CW) output power • Integrated ESD protection • ESD Rating: Human Body Model, Class 2 (per ANSI/ESDA/JEDEC JS-001) • Low thermal resistance • Pb-free and RoHS compliant

Parametric PXFC211507SC V1 R250 Flange Type Earless Matching I/O Frequency Band  min  max 2110.0MHz  2170.0MHz P1dB 150.0W Supply Voltage 28.0V Pout 32.0W Gain 20.4dB Test Signal WCDMA P1dB - Sales Product Name PXFC211507SC V1 R250 OPN PXFC211507SCV1R250XTMA1 Product Status active and preferred Package Name H-37248G-4 Completely lead free yes Halogen free yes RoHS compliant yes Packing Size 250 Packing Type TAPE & REEL

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