SIDC112D170H

Emitter Controlled Diode is Infineon's unique Fast Recovery Diode technology. The ultrathin wafer and Fieldstop technology makes the Emitter Controlled Diode ideally suited for consumer and industry applications as it lowers the turn-on losses of the IGBT with soft recovery. The Emitter Controlled Diode is optimized for Infineon IGBT technology.

ParametricSIDC112D170H
TechnologyEmitter Controlled Diode 3
VDS  max1700.0V
IF  max205.0A
I(FSM)  max410.0A
VF1.9V
IR  max20.0µA
Sales Product NameSIDC112D170H
OPNSIDC112D170HX1SA2
Product Statusactive and preferred
Package Name--
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size1
Packing TypeWAFER SAWN
Summary of Features:
  • Soft, fast switching
  • Low reverse recovery charge
  • Small temperature coefficient
Target Applications:
  • Industrial drives
  • Resonant applications
Data Sheet
TitleSizeDateVersion
SIDC112D170H,EN107 KB17 九月 201000_09
EN SIDC112D170H