SIDC38D60C8

Emitter Controlled Diode is Infineon's unique Fast Recovery Diode technology. The ultrathin wafer and Fieldstop technology makes the Emitter Controlled Diode ideally suited for consumer and industry applications as it lowers the turn-on losses of the IGBT with soft recovery. The Emitter Controlled Diode is optimized for Infineon IGBT technology.

ParametricSIDC38D60C8
TechnologyEmitter Controlled Diode 3
VDS  max600.0V
IF  max150.0A
I(FSM)  max300.0A
VF1.6V
IR  max27.0µA
Sales Product NameSIDC38D60C8
OPNSIDC38D60C8X1SA2
Product Statusactive and preferred
Package Name--
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size1
Packing TypeWAFER SAWN
OPNSIDC38D60C8X1SA1
Product Statusactive and preferred
Package Name--
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size1
Packing TypeWAFER SAWN
Summary of Features:
  • Soft, fast switching
  • Low reverse recovery charge
  • Small temperature coefficient
Target Applications:
  • Industrial drives
  • Resonant applications
Data Sheet
TitleSizeDateVersion
SIDC38D60C8,EN45 KB31 一月 201301_02
EN SIDC38D60C8