Parametric | T533N80TOH PR |
---|
VDRM / VRRM [V] | 8000.0 |
---|
ITAVM/TC [A/°C]
(@180° el sin) | 540/85 |
---|
ITSM [A]
(@10ms, Tvj max) | 10500.0 |
---|
∫I2dt [A²s · 103]
(@10ms, Tvj max) | 550.0 |
---|
VT/IT [V/kA]
(@Tvj max) | 2.75/1.0 |
---|
VT0 [V]
(@Tvj max)
max | 1.26 |
---|
rT [mΩ]
(@Tvj max)
max | 1.47 |
---|
tq [µs] | 650.0 |
---|
RthJC [K/kW]
(@180° el sin)
max | 20.0 |
---|
Tvj [°C]
max | 120.0 |
---|
Clamping force [kn]
min
max | 15.0
24.0 |
---|
Housing | Disc dia 76mm height 35mm / Ceramic |
---|
Configuration | Light Triggered Phase Control Thyristor |
---|
VDRM/ VRRM (V) | 8000.0V |
---|
ITSM | 10500.0A |
---|
ITAVM | 540 (85 ° el sin) |
---|
Sales Product Name | T533N80TOH PR |
---|
OPN | T533N80TOHXPSA1 |
---|
Product Status | active and preferred |
---|
Package Name | BG-T7635L-1 |
---|
Completely lead free | yes |
---|
Halogen free | yes |
---|
RoHS compliant | yes |
---|
Packing Size | 1 |
---|
Packing Type | TRAY |
---|
| |
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| Summary of Features:- Full blocking capability 50/60 Hz over a wide temperature range
- High DC blocking stability
- High case non-rupture current
- High turn-on di/dt capability
- High surge current capability
- High di/dt capability
- High dv/dt capability
Benefits:- Higher system cost competitiveness due to less electronics
- Less efforts and cost in gate unit development
- Easy way of triggering by using fiber optics to avoid insulation problems between load and trigger unit
- Minimized maintenance and reduced downtime due to high proven field reliability
- No EMI problem due to light trigger units
Benefits:- Higher system cost competitiveness due to less electronics
- Less efforts and cost in gate unit development
- Easy way of triggering by using fiber optics to avoid insulation problems between load and trigger unit
- Minimized maintenance and reduced downtime due to high proven field reliability
- No EMI problem due to light trigger units
功能框图 |