产品特性- 20V
- Drives high-side and low-side N-Channel MOSFETs or IGBTs with independent inputs or with a single PWM signal
- ±50V/ns dV/dt immunity
- TTL input thresholds
- 200ns input filtering time
- Shoot thru protection
- Low power consumption
- Supply undervoltage protection
- -40°C to +125°C junction temperature range
| 技术参数|
Parameter Name
Value
| Value | |
MOSFET Driver Type
Synchronous
|
Synchronous
| |
Driver Type
Half Bridge Driver
|
Half Bridge Driver
| |
Configuration
Dual Inputs, Single PWM
|
Dual Inputs, Single PWM
| |
Peak Output Current (source/sink, A)
1.0/1.0
|
1.0/1.0
| |
Output Resistance (source/sink, Ω)
8/9.2
|
8/9.2
| |
Propagation Delay (Td1/Td2, ns)
450/450
|
450/450
| |
Rise/Fall Time (Tr/Tf, ns)
31/31
|
31/31
| |
Capacitive Load Drive
1150 pF in 35 ns
|
1150 pF in 35 ns
| |
Features
600V Operation, State PIN
|
600V Operation, State PIN
|
|
