VDRM | repetitive peak off-state voltage | | | | 800 | V |
IT(RMS) | RMS on-state current | full sine wave; Tmb ≤ 121 °C | | | 12 | A |
ITSM | non-repetitive peak on-state current | full sine wave; Tj(init) = 25 °C; tp = 20 ms | | | 120 | A |
ITSM | non-repetitive peak on-state current | full sine wave; Tj(init) = 25 °C; tp = 16.7 ms | | | 132 | A |
Tj | junction temperature | | | | 150 | °C |
VPP | peak pulse voltage | Tj = 25 °C; non-repetitive, off-state | | | 2 | kV |
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IGT | gate trigger current | VD = 12 V; IT = 100 mA; LD+ G+; Tj = 25 °C | 5 | | 35 | mA |
IGT | gate trigger current | VD = 12 V; IT = 100 mA; LD+ G-; Tj = 25 °C | 5 | | 35 | mA |
IGT | gate trigger current | VD = 12 V; IT = 100 mA; LD- G-; Tj = 25 °C | 5 | | 35 | mA |
IH | holding current | VD = 12 V; Tj = 25 °C | | | 30 | mA |
VT | on-state voltage | IT = 17 A; Tj = 25 °C | | | 1.5 | V |
VCL | clamping voltage | ICL = 0.1 mA; tp = 1 ms; Tj = 25 °C | 850 | | | V |
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dVD/dt | rate of rise of off-state voltage | VDM = 536 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit | 4000 | | | V/µs |
dVD/dt | rate of rise of off-state voltage | VDM = 536 V; Tj = 150 °C; exponnetial waveform; gate open circuit | 2000 | | | V/µs |
dIcom/dt | rate of change of commutating current | VD = 400 V; Tj = 150 °C; IT(RMS) = 12 A; dVcom/dt = 20 V/µs; gate open circuit; snubberless condition | 12 | | | A/ms |
dIcom/dt | rate of change of commutating current | VD = 400 V; Tj = 150 °C; IT(RMS) = 12 A; dVcom/dt = 10 V/µs; gate open circuit | 15 | | | A/ms |
dIcom/dt | rate of change of commutating current | VD = 400 V; Tj = 150 °C; IT(RMS) = 8 A; dVcom/dt = 1 V/µs; gate open circuit | 20 | | | A/ms |