| VDRM | repetitive peak off-state voltage | | | | 800 | V |
| IT(RMS) | RMS on-state current | full sine wave; Th ≤ 94 °C | | | 4 | A |
| ITSM | non-repetitive peak on-state current | full sine wave; Tj(init) = 25 °C; tp = 20 ms | | | 35 | A |
| ITSM | non-repetitive peak on-state current | full sine wave; Tj(init) = 25 °C; tp = 16.7 ms | | | 39 | A |
| Tj | junction temperature | | | | 125 | °C |
| VPP | peak pulse voltage | Tj = 25 °C; non-repetitive, off-state | | | 2 | kV |
|
| IGT | gate trigger current | VD = 12 V; IT = 100 mA; LD+ G+; Tj = 25 °C | | | 35 | mA |
| IGT | gate trigger current | VD = 12 V; IT = 100 mA; LD+ G-; Tj = 25 °C | | | 35 | mA |
| IGT | gate trigger current | VD = 12 V; IT = 100 mA; LD- G-; Tj = 25 °C | | | 35 | mA |
| IH | holding current | VD = 12 V; Tj = 25 °C | | | 35 | mA |
| VT | on-state voltage | IT = 6 A; Tj = 25 °C | | | 1.7 | V |
| VCL | clamping voltage | ICL = 0.1 mA; tp = 1 ms; Tj = 25 °C | 850 | | | V |
|
| dVD/dt | rate of rise of off-state voltage | VDM = 536 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit | 1000 | | | V/µs |
| dIcom/dt | rate of change of commutating current | VD = 400 V; Tj = 125 °C; IT(RMS) = 4 A; dVcom/dt = 20 V/µs; (snubberless condition); gate open circuit | 8 | | | A/ms |
| dIcom/dt | rate of change of commutating current | VD = 400 V; Tj = 125 °C; IT(RMS) = 4 A; dVcom/dt = 10 V/µs; gate open circuit | 10 | | | A/ms |
| dIcom/dt | rate of change of commutating current | VD = 400 V; Tj = 125 °C; IT(RMS) = 4 A; dVcom/dt = 1 V/µs; gate open circuit | 15 | | | A/ms |
