AFT09S200W02N: 716-960 MHz,56 W平均值,28 V Airfast LDMOS射频功率晶体管

特性
  • 专为宽瞬时带宽应用而设计
  • 增大负栅源电压范围,改善C类放大器运行
  • 可承受极高的输出VSWR和宽带运行条件
  • 为Doherty应用进行了优化
  • 符合RoHS规范
  • 采用盘卷包装。R3后缀 = 250个,32 mm卷带宽度,13英寸卷盘。
OM-780-2L, OM-780G-2L Package Images
数据手册 (1)
名称/描述Modified Date
AFT09S200W02NR3, AFT09S200W02GNR3 716-960 MHz, 56 W AVG., 28 V Airfast® RF Power LDMOS Transistors -... (REV 0) PDF (877.5 kB) AFT09S200W02N [English]15 Apr 2014
应用说明 (3)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907 [English]13 May 2009
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN3789 [English]12 Mar 2009
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
封装信息 (2)
名称/描述Modified Date
98ASA10831D, OMNI, 20.57x9.78x3.81, Pitch 9.96, 2 Pins (REV C) PDF (68.6 kB) 98ASA10831D [English]22 Mar 2016
98ASA00442D, OMNI, 20.57x9.78x3.81, Pitch 9.96, 3 Pins (REV A) PDF (76.9 kB) 98ASA00442D [English]15 Feb 2016
印刷电路板
订购信息
型号状态状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
AFT09S200W02GNR3Active716960285320056 @ AVGW-CDMA19.2 @ 96036.50.35I/OABLDMOS
AFT09S200W02NR3Active716960285320056 @ AVGW-CDMA19.2 @ 96036.50.35I/OABLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询MSLPPT (°C)
OM780-2 Gull Cu98ASA00442DMPQ - 250 REELPOQ - 250 REELActiveAFT09S200W02GNR3AFT09S200W02GNR3.pdf3260
OM780-2 Straight Cu98ASA10831DMPQ - 250 REELPOQ - 250 REELActiveAFT09S200W02NR3AFT09S200W02NR3.pdf3260
AFT09S200W02NR3, AFT09S200W02GNR3 716-960 MHz, 56 W AVG., 28 V Airfast® RF Power LDMOS Transistors -... AFT09S200W02N
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
AFT09S200W02N 900 MHz PCB DXF file AFT09S200W02N
98ASA00442D, OMNI, 20.57x9.78x3.81, Pitch 9.96, 3 Pins MHT1004N
AFT09S200W02GNR3.pdf AFT09S200W02N
98ASA10831D, OMNI, 20.57x9.78x3.81, Pitch 9.96, 2 Pins MMRF1017N
AFT09S200W02NR3.pdf AFT09S200W02N