AFT09S200W02S: 920-960 MHz,56 W平均值,28 V Airfast LDMOS射频功率晶体管

特性
  • 专为宽瞬时带宽应用而设计
  • 增大负栅源电压范围,改善C类放大器运行
  • 专为数字预失真纠错系统而设计
  • 可承受极高的输出VSWR和宽带运行条件
  • 为Doherty应用进行了优化
  • 符合RoHS规范
NI-780S-2 Package Image
数据手册 (1)
名称/描述Modified Date
AFT09S200W02SR3 920-960 MHz, 56 W Avg., 28 V Airfast® RF Power LDMOS Transistor Data Sheet (REV 0) PDF (533.8 kB) AFT09S200W02S [English]23 Apr 2015
应用说明 (1)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
封装信息 (1)
名称/描述Modified Date
98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins (REV J) PDF (43.5 kB) 98ASB16718C [English]22 Mar 2016
订购信息
型号状态状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
AFT09S200W02SR3Active9209602851.714856 @ AVGW-CDMA19.4 @ 96035.60.34I/OABLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询PPT (°C)
NI-780S98ASB16718CMPQ - 250 REELPOQ - 250 REELActiveAFT09S200W02SR3AFT09S200W02SR3.pdf260
AFT09S200W02SR3 920-960 MHz, 56 W Avg., 28 V Airfast® RF Power LDMOS Transistor Data Sheet AFT09S200W02S
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins MMRF1011H
AFT09S200W02SR3.pdf AFT09S200W02S