AFV09P350-04N: 720-960 MHz, 100 W Avg., 48 V Airfast® RF Power LDMOS Transistors

特性
  • Production Tested in a Symmetrical Doherty Configuration
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13-inch Reel.
OM-780-4L, OM-780G-4L Package Image
数据手册 (1)
名称/描述Modified Date
AFV09P350-04NR3, AFV09P350-04GNR3 720-960 MHz, 100 W Avg., 48 V Airfast® RF Power LDMOS Transistors... (REV 0) PDF (512.1 kB) AFV09P350-04N [English]13 Jan 2014
应用说明 (3)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907 [English]13 May 2009
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN3789 [English]12 Mar 2009
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
封装信息 (2)
名称/描述Modified Date
98ASA10833D, OMNI, 20.57x9.78x3.81, Pitch 8.89, 5 Pins (REV B) PDF (69.8 kB) 98ASA10833D [English]22 Mar 2016
98ASA10834D, OMNI, 20.57x9.96x3.81, Pitch 8.89, 5 Pins (REV E) PDF (76.8 kB) 98ASA10834D [English]22 Mar 2016
订购信息
型号状态状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
AFV09P350-04GNR3Active7209604853200100 @ AVGW-CDMA19.5 @ 92048.50.45InputABLDMOS
AFV09P350-04NR3Active7209604853200100 @ AVGW-CDMA19.5 @ 92048.50.45InputABLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询MSLPPT (°C)
OM780-4 GULL PLASTIC98ASA10834DMPQ - 250 REELPOQ - 250 REELActiveAFV09P350-04GNR3AFV09P350-04GNR3.pdf3260
OM780-4 PLASTIC98ASA10833DMPQ - 250 REELPOQ - 250 REELActiveAFV09P350-04NR3AFV09P350-04NR3.pdf3260
AFV09P350-04NR3, AFV09P350-04GNR3 720-960 MHz, 100 W Avg., 48 V Airfast® RF Power LDMOS Transistors... AFV09P350-04N
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
98ASA10834D, OMNI, 20.57x9.96x3.81, Pitch 8.89, 5 Pins MMRF1020-04N
AFV09P350-04GNR3.pdf AFV09P350-04N
98ASA10833D, OMNI, 20.57x9.78x3.81, Pitch 8.89, 5 Pins MMRF1020-04N
AFV09P350-04NR3.pdf AFV09P350-04N