BGS8L3UK: SiGe:C Low Noise Amplifier MMIC with bypass switch for LTE

The BGS8L3UK is a Low Noise Amplifier (LNA) with bypass switch for LTE receiver applications, available in a Wafer-Level Chip-Scale Package (WLCSP). The BGS8L3UK requires one external matching inductor.

The BGS8L3UK delivers system-optimized gain for both primary and diversity applications where sensitivity improvement is required. The high linearity of this low noise device ensures the required receive sensitivity independent of cellular transmit power level in Frequency Division Duplex (FDD) systems. When receive signal strength is sufficient, the BGS8L3UK can be switched off to operate in bypass mode at a 1 µA current, to lower power consumption.

The BGS8L3UK is optimized for 720 MHz to 960 MHz.

sot1445-1_3d
应用说明 (1)
名称/描述Modified Date
BGS8L3UK LTE LNA with bypass switch evaluation board (REV 1.0) PDF (823.0 kB) AN11679 [English]13 Oct 2016
封装信息 (1)
名称/描述Modified Date
wafer level chip-scale package; 6 bumps; 0.69 x 0.44 x 0.29 mm (REV 1.1) PDF (218.0 kB) SOT1445-1 [English]12 Jul 2016
包装 (1)
名称/描述Modified Date
WLSCP6; Reel dry pack, SMD, 13" Q1/T1 standard product orientation Orderable part number ending ,019 or... (REV 1.0) PDF (201.0 kB) SOT1445-1_019 [English]28 Aug 2015
S-参数
订购信息
型号状态Package version@VCC [min] (V)@VCC [max] (V)@ICC [typ] (mA)Gp [typ] (dB)NF [typ] (dB)Pi(1dB) [min] (dBm)Pi(1dB) [typ] (dBm)IP3i [min] (dBm)IP3i [typ] (dBm)@VCC (V)@f (MHz)
BGS8L3UKActiveSOT1445-11.53.1150.9-3.5
封装环保信息
产品编号封装说明Outline Version回流/波峰焊接包装产品状态部件编号订购码 (12NC)Marking化学成分RoHS / 无铅 / RHF无铅转换日期MSLMSL LF
BGS8L3UKSOT1445-1Reel 13" Q1/T1 in DrypackActiveBGS8L3UKAZ (9340 695 54019)Standard MarkingBGS8L3UKAlways Pb-free11
BGS8L3UK LTE LNA with bypass switch evaluation board BGS8L3UK
BGS8L3UK gain mode Spar and Noise BGS8L3UK
wafer level chip-scale package; 6 bumps; 0.69 x 0.44 x 0.29 mm BGU8103UK
WLSCP6; Reel dry pack, SMD, 13" Q1/T1 standard product orientation Orderable part number ending ,019 or... BGU8103UK