数据手册DataSheet 下载BLF25M612 功率LDMOS晶体管.pdf

12 W LDMOS功率晶体管,用于2400 MHz至2500 MHz频率范围的工业、科学和医疗(ISM)应用。BLF25M612是一款驱动器,主要用于高功率CW应用,组装在高性能陶瓷封装中。

产品特点
  • 高效率
  • 高功率增益
  • 极佳的强度
  • 极佳的热稳定性
  • 集成ESD保护
  • 主要用于宽带操作(2400 MHz至2500 MHz)
  • 符合有害物质限制的Directive 2002/95/EC
产品应用
  • 工业、科学和医疗应用(2400 MHz至2500 MHz)
订购型号
订购型号封装Outline versionReflow-/Wave soldering包装产品状态标示订购器件的编号
BLF25M612CDFM2 (SOT975B)sot975b_poReel Pack, SMD, 13" Q1/T1激活Standard MarkingBLF25M612,118( 9340 662 19118 )
品质、可靠性及RoHS化学成分
订购型号订购器件的编号RoHS / RHF无铅开始日期EFRIFR (FIT)MTBF(小时)潮湿敏感度等级MSL LF
BLF25M612BLF25M612,118Always Pb-free11
BLF25M612BLF25M612,112Always Pb-free11
产品技术资料
文档标题类型分类格式更新日期
BLF25M612_BLF25M612G (中文):Power LDMOS transistorData sheetpdf2014-02-24
AN10896:Mounting and Soldering of RF transistorsApplication notepdf2012-12-19
PCB_Design_BLF25M612_BLF25M612G_Data-sheet:PCB Design BLF25M612(G) (Data sheet)Design supportzip2014-02-27
75017344:RF power as a robust and highly efficient energy sourceLeafletpdf2012-09-29
fatigue_in_aluminum_bond_wires:Fatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
75017565:NXP's RF Manual 18th editionSelection guidepdf2014-06-17
sot975b_po:earless flanged ceramic package; 2 leadsOutline drawingpdf2007-09-27
Power LDMOS transistor BLF25M612_G
Power LDMOS transistor BLF25M612_G
Power LDMOS transistor BLF25M612_G
Mounting and Soldering of RF transistors aerospace_defense
PCB Design BLF25M612(G) (Data sheet) BLF25M612_G
RF power as a robust and highly efficient energy source rf_energy_ism
Fatigue in aluminum bond wires gan_devices
NXP's RF Manual 18th edition OL2300NHN
earless flanged ceramic package; 2 leads BLF25M612_G