BLF25M612(G)：Power LDMOS transistor
12 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz.
The BLF25M612 and BLF25M612G are drivers designed for high power CW applications and is assembled in a high performance ceramic package.
特性和优势
应用
| 产品图片  |
关键参数
| 型号 | Package version | frange [min] (MHz) | frange [max] (MHz) | PL(1dB) (W) | VDS (V) | η (%) | GP (dB) | Test signal | Product status |
|---|---|---|---|---|---|---|---|---|---|
| BLF25M612 | SOT975B | 2400 | 2500 | 12 | 28 | 60 | 19 | CW; CW | Production |
| BLF25M612G | SOT975C | 2400 | 2500 | 12 | 28 | 60 | 19 | CW; CW | Production |
封装与包装
| 型号 | 封装 | Outline version | Reflow-/Wave soldering | 包装 | 产品状态 | 标示 | 可订购的器件编号, (订购码 (12NC)) |
|---|---|---|---|---|---|---|---|
| BLF25M612 |  CDFM2 (SOT975B) | sot975b_po | Reel 13" Q1/T1 | 量产 | Standard Marking | BLF25M612,118( 9340 662 19118 ) | |
| Bulk Pack | 量产 | Standard Marking | BLF25M612,112( 9340 662 19112 ) | ||||
| BLF25M612G |  CDFM2 (SOT975C) | sot975c_po | Reel 13" Q1/T1 | 量产 | Standard Marking | BLF25M612G,118( 9340 662 21118 ) | |
| Bulk Pack | 量产 | Standard Marking | BLF25M612G,112( 9340 662 21112 ) |
无铅环保信息
| 型号 | 可订购的器件编号 | RoHS / RHF | 无铅转换日期 | 潮湿敏感度等级 | MSL LF |
|---|---|---|---|---|---|
| BLF25M612 | BLF25M612,118 |   | Always Pb-free | 1 | 1 |
| BLF25M612 | BLF25M612,112 | | Always Pb-free | 1 | 1 |
| BLF25M612G | BLF25M612G,118 | | Always Pb-free | 1 | 1 |
| BLF25M612G | BLF25M612G,112 | | Always Pb-free | 1 | 1 |
文档资料
| 档案名称 | 标题 | 类型 | 格式 | 日期 |
|---|---|---|---|---|
| BLF25M612_BLF25M612G (中文) | Power LDMOS transistor | Data sheet | 2014-12-16 | |
| AN10896 | Mounting and Soldering of RF transistors | Application note | 2015-03-24 | |
| PCB_Design_BLF25M612_BLF25M612G_Data-sheet | PCB Design BLF25M612(G) (Data sheet) | Design support | zip | 2014-02-27 |
| 75017344 | RF power as a robust and highly efficient energy source | Leaflet | 2012-09-30 | |
| fatigue_in_aluminum_bond_wires | Fatigue in aluminum bond wires | Mounting and soldering | 2009-10-08 | |
| NXP_RF_manual_19th_edition | RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 | Other type | 2015-05-19 | |
| BLF25M612G_ADS-2009_Model | BLF25M612G ADS-2009 Model | Simulation model | zip | 2014-02-24 |
| BLF25M612G_ADS-2011_Model | BLF25M612G ADS-2011 Model | Simulation model | zip | 2014-04-10 |
| sot975c_po | earless flanged ceramic package; 2 leads | Outline drawing | 2008-07-09 | |
| sot975b_po | earless flanged ceramic package; 2 leads | Outline drawing | 2007-09-27 |
订购信息
| 型号 | 订购码 (12NC) | 可订购的器件编号 |
|---|---|---|
| BLF25M612 | 9340 662 19118 | BLF25M612,118 |
| BLF25M612 | 9340 662 19112 | BLF25M612,112 |
| BLF25M612G | 9340 662 21118 | BLF25M612G,118 |
| BLF25M612G | 9340 662 21112 | BLF25M612G,112 |
模型
| 标题 | 类型 | 日期 |
|---|---|---|
| BLF25M612G ADS-2009 Model | Simulation model | 2014-02-24 |
| BLF25M612G ADS-2011 Model | Simulation model | 2014-04-10 |
其它
| 标题 | 类型 | 日期 |
|---|---|---|
| PCB Design BLF25M612(G) (Data sheet) | Design support | 2014-02-27 |
- Power LDMOS transistor BLF25M612_G
- Power LDMOS transistor BLF25M612_G
- Power LDMOS transistor BLF25M612_G
- Mounting and Soldering of RF transistors aerospace_defense
- RF power as a robust and highly efficient energy source rf_energy_ism
- Fatigue in aluminum bond wires gan_devices
- RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
- earless flanged ceramic package; 2 leads BLS6G2731-6G
- earless flanged ceramic package; 2 leads BLF25M612_G
- BLF25M612G ADS-2009 Model BLF25M612_G
- BLF25M612G ADS-2011 Model BLF25M612_G
- PCB Design BLF25M612(G) (Data sheet) BLF25M612_G
