BLF871S:超高频LDMOS功率晶体管

100 W LDMOS RF功率晶体管,用于广播发射器应用和工业应用。

特性和优势
    • 轻松控制功率
    • 极佳的可靠性
    • 集成ESD保护
    • 高功率增益
    • 高效
    • 出色的耐用性
    • 符合欧盟2002/95/EC危害性物质限制指令
应用
    • 超高频频率范围内的通信发射器应用
    • 超高频频段内的工业应用
产品图片
关键参数
SymbolParameterConditionsMinTyp/NomMaxUnit
frangefrequency range11000MHz
PL(1dB)nominal output power at 1 dB gain compression100W
Gppower gainPL = 100 W; VDS = 40 V; f = 860 MHz21dB
ηDdrain efficiencyPL = 100 W; VDS = 40 V; f = 860 MHz; IDq = 500 mA60%
PLoutput power100W
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLF871S

(SOT467B)
sot467b_poBulk Pack量产Standard MarkingBLF871S,112( 9340 635 02112 )
引脚配置信息
PinSymbolDescription外形简图图形符号
1Ddrain
2Ggate
3Ssource
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLF871SBLF871S,112Always Pb-freeNANA
文档资料
档案名称标题类型格式日期
BLF871_BLF871S (中文)UHF power LDMOS transistorData sheetpdf2010-06-25
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
PCB_Design_BLF871_BLF871S_Data-sheetPCB Design BLF871(S) (Data sheet)Design supportzip2012-02-24
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
Application_Measurement_Report_BLF871_470-860MHz_NA-1329Application Measurement Report BLF871 470-860 MHz NA-1329Reportpdf2015-06-23
BLF871_ADS-2009_ModelBLF871 ADS-2009 ModelSimulation modelzip2013-04-02
NXP_RFpower_Lib_V09p0RF Power Model Library for Microwave Office®Simulation modelzip2014-11-11
NXP_RFpower_Manual_MWO_20141111RF Power Model Library Manual and Installation Instructions for Microwave Office®Simulation modelpdf2014-11-11
NXP_RFPower_Simulation_ExampleRF Power Simulation Example for Microwave Office®Simulation modelzip2012-06-11
BLF871_ADS-2011_ModelBLF871 ADS-2011 ModelSimulation modelzip2014-04-11
sot467b_poearless ceramic package; 2 leadsOutline drawingpdf2012-05-08
订购信息
型号订购码 (12NC)可订购的器件编号
BLF871S9340 635 02112BLF871S,112
模型
标题类型日期
BLF871 ADS-2009 ModelSimulation model2013-04-02
RF Power Model Library for Microwave Office®Simulation model2014-11-11
RF Power Model Library Manual and Installation Instructions for Microwave Office®Simulation model2014-11-11
RF Power Simulation Example for Microwave Office®Simulation model2012-06-11
BLF871 ADS-2011 ModelSimulation model2014-04-11
其它
标题类型日期
PCB Design BLF871(S) (Data sheet)Design support2012-02-24
UHF power LDMOS transistor BLF871_S
UHF power LDMOS transistor BLF871_S
UHF power LDMOS transistor BLF871_S
Mounting and Soldering of RF transistors aerospace_defense
Fatigue in aluminum bond wires gan_devices
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
Application Measurement Report BLF871 470-860 MHz NA-1329 BLF871_S
earless ceramic package; 2 leads CLF1G0035_S_50
BLF871 ADS-2009 Model BLF871_S
RF Power Model Library for Microwave Office® CLF1G0060_S_30
RF Power Model Library Manual and Installation Instructions for Microwave Office® CLF1G0060_S_30
RF Power Simulation Example for Microwave Office® CLF1G0060_S_30
BLF871 ADS-2011 Model BLF871_S
PCB Design BLF871(S) (Data sheet) BLF871_S