数据手册DataSheet 下载BLF888BS UHF功率LDMOS晶体管.pdf

650W LDMOS RF功率晶体管,用于DVB-T广播应用,经过优化以在Doherty解决方案中提供极高的功率和效率。

产品特点
  • 最适合分频段(70MH至100MHz)的Doherty解决方案
  • 极高的功率(P1dB 650W)
  • 极高的Doherty效率(>50%)
  • 内部输入匹配实现高增益
  • 最佳热性能和可靠性,Rth(j-c) = 0.15 K/W
产品应用
  • UHF频段内的通信发射器应用
  • UHF频段内的工业应用
订购型号
订购型号封装Outline versionReflow-/Wave soldering包装产品状态标示订购器件的编号
BLF888BS(SOT539B)sot539b_poBulk Pack激活Standard MarkingBLF888BS,112( 9340 651 22112 )
品质、可靠性及RoHS化学成分
订购型号订购器件的编号RoHS / RHF无铅开始日期EFRIFR (FIT)MTBF(小时)潮湿敏感度等级MSL LF
BLF888BSBLF888BS,112Always Pb-freeNANA
产品技术资料
文档标题类型分类格式更新日期
BLF888B_BLF888BS (中文):UHF power LDMOS transistorData sheetpdf2013-07-12
AN10896:Mounting and Soldering of RF transistorsApplication notepdf2012-12-19
PCB_Design_BLF888B_BLF888BS_Data-sheet:PCB Design BLF888B(S) (Data sheet)Design supportzip2012-02-24
75017197:RF power UHF/DVB-T broadcasting at its bestLeafletpdf2011-11-29
fatigue_in_aluminum_bond_wires:Fatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
75017565:NXP's RF Manual 18th editionSelection guidepdf2014-06-17
BLF888B_ADS-2011_Model:BLF888B ADS-2011 ModelSimulation modelzip2014-04-11
sot539b_po:earless flanged balanced ceramic package; 4 leadsOutline drawingpdf2012-05-08
UHF power LDMOS transistor BLF888B_S
UHF power LDMOS transistor BLF888B_S
UHF power LDMOS transistor BLF888B_S
Mounting and Soldering of RF transistors aerospace_defense
PCB Design BLF888B(S) (Data sheet) BLF888B_S
RF power UHF/DVB-T broadcasting at its best BLF888D_S
Fatigue in aluminum bond wires gan_devices
NXP's RF Manual 18th edition OL2300NHN
BLF888B ADS-2011 Model BLF888B_S
earless flanged balanced ceramic package; 4 leads BLU6H0410L_S_600P