BLL8H0514-25:Power LDMOS transistor

25 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range.

特性和优势
    • Easy power control
    • Integrated dual side ESD protection
    • High flexibility with respect to pulse formats
    • Excellent ruggedness
    • High efficiency
    • Excellent thermal stability
    • Designed for broadband operation (0.5 GHz to 1.4 GHz)
    • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
应用
    • Amplifiers for pulsed applications in the 0.5 GHz to 1.4 GHz frequency range
产品图片
关键参数
SymbolParameterConditionsMinTyp/NomMaxUnit
frangefrequency range5001400MHz
PL(1dB)nominal output power at 1 dB gain compression25W
Gppower gainPL = 25 W; VDS = 50 V [0]2021dB
RLininput return lossPL = 25 W; VDS = 50 V [0]-15-10dB
ηDdrain efficiencyPL = 25 W; VDS = 50 V [0]5759%
Pdroop(pulse)pulse droop powerPL = 25 W [0]00.3dB
trrise timePL = 25 W; VDS = 50 V [0]2050ns
tffall timePL = 25 W; VDS = 50 V [0]650ns
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLL8H0514-25

(SOT467C)
sot467c_poBulk Pack量产Standard MarkingBLL8H0514-25U( 9340 687 29112 )
引脚配置信息
PinSymbolDescription外形简图图形符号
1Ddrain
2Ggate
3Ssource
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLL8H0514-25BLL8H0514-25UAlways Pb-freeNANA
文档资料
档案名称标题类型格式日期
BLL8H0514-25 (中文)Power LDMOS transistorData sheetpdf2015-02-09
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
PCB_Design_BLL8H0514-25_Data-sheetPCB Design BLL8H0514-25 (Data sheet)Design supportzip2015-02-12
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
RFPower_Longevity_OverviewRF Power Longevity OverviewOther typepdf2014-09-09
sot467c_poflanged ceramic package; 2 mounting holes; 2 leadsOutline drawingpdf1999-12-27
SOT467C_112CDFM2; blister pack; standard product orientation 12NC ending 112Packingpdf2012-11-30
订购信息
型号订购码 (12NC)可订购的器件编号
BLL8H0514-259340 687 29112BLL8H0514-25U
其它
标题类型日期
PCB Design BLL8H0514-25 (Data sheet)Design support2015-02-12
Power LDMOS transistor BLL8H0514-25
Mounting and Soldering of RF transistors aerospace_defense
Fatigue in aluminum bond wires gan_devices
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
RF Power Longevity Overview gan_devices
flanged ceramic package; 2 mounting holes; 2 leads CLF1G0035_S_50
CDFM2; blister pack; standard product orientation 12NC ending 112 CLF1G0035_S_50
PCB Design BLL8H0514-25 (Data sheet) BLL8H0514-25