数据手册DataSheet 下载BLS6G3135S-20 LDMOS S波段雷达功率晶体管.pdf

20 W LDMOS功率晶体管,用于3.1 GHz至3.5 GHz范围的雷达应用。

产品特点
  • 极佳的强度
  • 集成ESD保护
  • 极佳的热稳定性
  • 内部匹配以方便使用
  • 高效率
  • 主要用于宽带操作(3.1 GHz至3.5 GHz)
  • 符合有害物质限制的Directive 2002/95/EC
产品应用
  • 3.1 GHz至3.5 GHz频率范围内的雷达应用
  • S频段功率放大器
订购型号
订购型号封装Outline versionReflow-/Wave soldering包装产品状态标示订购器件的编号
BLS6G3135S-20CDFM2 (SOT608B)sot608b_poBulk Pack激活Standard MarkingBLS6G3135S-20,112( 9340 610 39112 )
品质、可靠性及RoHS化学成分
订购型号订购器件的编号RoHS / RHF无铅开始日期EFRIFR (FIT)MTBF(小时)潮湿敏感度等级MSL LF
BLS6G3135S-20BLS6G3135S-20,112Always Pb-freeNANA
产品技术资料
文档标题类型分类格式更新日期
BLS6G3135-20_6G3135S-20 (中文):LDMOS S-Band radar power transistorData sheetpdf2013-03-11
AN10896:Mounting and Soldering of RF transistorsApplication notepdf2012-12-19
PCB_Design_BLS6G3135-20_6G3135S-20_Data-sheet:PCB Design BLS6G3135(S)-20 (Data sheet)Design supportzip2012-02-24
fatigue_in_aluminum_bond_wires:Fatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
layout_pcb_in_out_bls6g3135s-20:layout_pcb_in_out_bls6g3135s-20Other typezip2009-01-15
75017565:NXP's RF Manual 18th editionSelection guidepdf2014-06-17
BLS6G3135-20_ADS-2009_Model:BLS6G3135-20 ADS-2009 ModelSimulation modelzip2013-02-28
sot608b_po:ceramic earless flanged package; 2 leadsOutline drawingpdf2006-12-05
LDMOS S-Band radar power transistor BLS6G3135_S_20
LDMOS S-Band radar power transistor BLS6G3135_S_20
LDMOS S-Band radar power transistor BLS6G3135_S_20
Mounting and Soldering of RF transistors aerospace_defense
PCB Design BLS6G3135(S)-20 (Data sheet) BLS6G3135_S_20
Fatigue in aluminum bond wires gan_devices
layout_pcb_in_out_bls6g3135s-20 BLS6G3135_S_20
NXP's RF Manual 18th edition OL2300NHN
BLS6G3135-20 ADS-2009 Model BLS6G3135_S_20
ceramic earless flanged package; 2 leads BLS6G3135_S_20