BTA330Y-800BT：3Q Hi-Com Triac _ BDTIC 中国领先电子元器件代理商

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BTA330Y-800BT：3Q Hi-Com Triac

Planar passivated high commutation three quadrant triac in a SOT78D (TO-220AB) internally insulated plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/ dt can occur. This triac will commutate the full RMS current at the maximum rated junction temperature (Tj(max) = 150 °C) without the aid of a snubber. It is used in applications where "high junction operating temperature capability" is required.

特性和优势

3Q technology for improved noise immunity
High commutation capability with maximum false trigger immunity
High junction operating temperature capability (Tj(max) = 150 °C)
High voltage capability
High current capability
Less sensitive gate for highest noise immunity
Internally insulated package
Internally isolated mounting base
Triggering in three quadrants only
Very high immunity to false turn-on by dv/dt and IEC 61000-4-4 fast transient
Package is RoHS compliant
Package meets UL94V0 flammability requirement
Package meets UL1557 isolation test requirement rated at 2500V RMS

应用

Heating controls
High power motor control
High power switching
Applications subject to high temperature (Tj(max) = 150 °C)

产品图片

关键参数

Symbol	Parameter	Conditions	Min	Typ/Nom	Max	Unit
V_DRM	repetitive peak off-state voltage				800	V
I_T(RMS)	RMS on-state current	full sine wave; T_mb ≤ 86 °C			30	A
I_TSM	non-repetitive peak on-state current	full sine wave; T_j(init) = 25 °C; t_p = 20 ms			270	A
I_TSM	non-repetitive peak on-state current	full sine wave; T_j(init) = 25 °C; t_p = 16.7 ms			297	A
T_j	junction temperature				150	°C
I_GT	gate trigger current	V_D = 12 V; I_T = 0.1 A; T2+ G+; T_j = 25 °C			50	mA
I_GT	gate trigger current	V_D = 12 V; I_T = 0.1 A; T2+ G-; T_j = 25 °C			50	mA
I_GT	gate trigger current	V_D = 12 V; I_T = 0.1 A; T2- G-; T_j = 25 °C			50	mA
I_H	holding current	V_D = 12 V; T_j = 25 °C			75	mA
V_T	on-state voltage	I_T = 42 A; T_j = 25 °C		1.2	1.55	V
dV_D/dt	rate of rise of off-state voltage	V_DM = 536 V; T_j = 125 °C; (V_DM = 67% of V_DRM); exponential waveform; gate open circuit	4000			V/µs
dV_D/dt	rate of rise of off-state voltage	V_DM = 536 V; T_j = 150 °C; (V_DM = 67% of V_DRM); exponential waveform; gate open circuit	2000			V/µs
dI_com/dt	rate of change of commutating current	V_D = 400 V; T_j = 125 °C; I_T(RMS) = 30 A; dV_com/dt = 20 V/µs; (snubberless condition); gate open circuit	20			A/ms
dI_com/dt	rate of change of commutating current	V_D = 400 V; T_j = 150 °C; I_T(RMS) = 30 A; dV_com/dt = 20 V/µs; (snubberless condition); gate open circuit	15			A/ms

封装与包装

型号	封装	Outline version	Reflow-/Wave soldering	包装	产品状态	标示	可订购的器件编号, (订购码 (12NC))
BTA330Y-800BT	TO-220AB (SOT78D)	sot078d_po		Horizontal, Rail Pack	量产	Standard Marking	BTA330Y-800BTQ( 9340 696 28127 )

引脚配置信息

Pin	Symbol	Description
1	T1	main terminal 1
2	T2	main terminal 2
3	G	gate
mb	n.c.	mounting base; isolated

无铅环保信息

型号	可订购的器件编号	RoHS / RHF	无铅转换日期	潮湿敏感度等级	MSL LF
BTA330Y-800BT	BTA330Y-800BTQ			NA	NA

文档资料

档案名称	标题	类型	格式	日期
sot078d_po	plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220	Outline drawing	pdf	2007-07-09

订购信息

型号	订购码 (12NC)	可订购的器件编号
BTA330Y-800BT	9340 696 28127	BTA330Y-800BTQ

plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 BT138Y-800E