| VDRM | repetitive peak off-state voltage | | | | 800 | V |
| IT(RMS) | RMS on-state current | full sine wave; Tmb ≤ 120 °C | | | 10 | A |
| ITSM | non-repetitive peak on-state current | full sine wave; Tj(init) = 25 °C; tp = 20 ms | | | 100 | A |
| ITSM | non-repetitive peak on-state current | full sine wave; Tj(init) = 25 °C; tp = 16.7 ms | | | 110 | A |
| Tj | junction temperature | | | | 150 | °C |
|
| IGT | gate trigger current | VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C | 2 | | 50 | mA |
| IGT | gate trigger current | VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C | 2 | | 50 | mA |
| IGT | gate trigger current | VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C | 2 | | 50 | mA |
| IH | holding current | VD = 12 V; Tj = 25 °C | | | 60 | mA |
| VT | on-state voltage | IT = 15 A; Tj = 25 °C | | 1.3 | 1.6 | V |
|
| dVD/dt | rate of rise of off-state voltage | VDM = 536 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit | 1000 | | | V/µs |
| dIcom/dt | rate of change of commutating current | VD = 400 V; Tj = 150 °C; IT(RMS) = 10 A; dVcom/dt = 20 V/µs; (snubberless condition); gate open circuit | 20 | | | A/ms |
| dIcom/dt | rate of change of commutating current | VD = 400 V; Tj = 150 °C; IT(RMS) = 10 A; dVcom/dt = 10 V/µs; gate open circuit | 28 | | | A/ms |
| dIcom/dt | rate of change of commutating current | VD = 400 V; Tj = 150 °C; IT(RMS) = 10 A; dVcom/dt = 1 V/µs; gate open circuit | 45 | | | A/ms |
