BTA425Y-800CT：3Q Hi-Com Triac _ BDTIC 中国领先电子元器件代理商

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BTA425Y-800CT：3Q Hi-Com Triac

Planar passivated high commutation three quadrant triac in a SOT78D (TO-220AB) internally insulated plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series CT" triac will commutate the full RMS current at the maximum rated junction temperature (Tj(max) = 150 °C) without the aid of a snubber. It is used in applications where "high junction operating temperature capability" is required.

特性和优势

3Q technology for improved noise immunity
2500 V RMS isolation voltage capability
High commutation capability with maximum false trigger immunity
High immunity to false turn-on by dV/dt
High junction operating temperature capability
High voltage capability
High current capability
Less sensitive gate for high noise immunity
Internally insulated package
Internally isolated mounting base
Planar passivated for voltage ruggedness and reliability
Triggering in three quadrants only

应用

Applications subject to high temperature
Heating controls
High power motor control
High power switching

产品图片

关键参数

Symbol	Parameter	Conditions	Min	Typ/Nom	Max	Unit
V_DRM	repetitive peak off-state voltage				800	V
I_T(RMS)	RMS on-state current	full sine wave; T_mb ≤ 101 °C			25	A
I_TSM	non-repetitive peak on-state current	full sine wave; T_j(init) = 25 °C; t_p = 20 ms			250	A
I_TSM	non-repetitive peak on-state current	full sine wave; T_j(init) = 25 °C; t_p = 16.7 ms			275	A
T_j	junction temperature				150	°C
I_GT	gate trigger current	V_D = 12 V; I_T = 0.1 A; T2+ G+; T_j = 25 °C			35	mA
I_GT	gate trigger current	V_D = 12 V; I_T = 0.1 A; T2+ G-; T_j = 25 °C			35	mA
I_GT	gate trigger current	V_D = 12 V; I_T = 0.1 A; T2- G-; T_j = 25 °C			35	mA
I_H	holding current	V_D = 12 V; T_j = 25 °C			50	mA
V_T	on-state voltage	I_T = 35 A; T_j = 25 °C		1.2	1.5	V
dV_D/dt	rate of rise of off-state voltage	V_DM = 536 V; T_j = 150 °C; (V_DM = 67% of V_DRM); exponential waveform; gate open circuit	1000			V/µs
dI_com/dt	rate of change of commutating current	V_D = 400 V; T_j = 150 °C; I_T(RMS) = 25 A; dV_com/dt = 20 V/µs; (snubberless condition); gate open circuit	13			A/ms

封装与包装

型号	封装	Outline version	Reflow-/Wave soldering	包装	产品状态	标示	可订购的器件编号, (订购码 (12NC))
BTA425Y-800CT	TO-220AB (SOT78D)	sot078d_po		Horizontal, Rail Pack	量产	BTA425Y-800CT	BTA425Y-800CTQ( 9340 673 74127 )

引脚配置信息

Pin	Symbol	Description
1	T1	main terminal 1
2	T2	main terminal 2
3	G	gate
mb	n.c.	mounting base; isolated

无铅环保信息

型号	可订购的器件编号	RoHS / RHF	无铅转换日期	潮湿敏感度等级	MSL LF
BTA425Y-800CT	BTA425Y-800CTQ

文档资料

档案名称	标题	类型	格式	日期
BTA425Y-800CT (中文)	3Q Hi-Com Triac	Data sheet	pdf	2014-06-23
75017631	Discretes Semiconductors Selection Guide 2015	Selection guide	pdf	2015-01-09
sot078d_po	plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220	Outline drawing	pdf	2007-07-09

订购信息

型号	订购码 (12NC)	可订购的器件编号
BTA425Y-800CT	9340 673 74127	BTA425Y-800CTQ

3Q Hi-Com Triac BTA425Y-800CT

Discretes Semiconductors Selection Guide 2016 BUK7M12-60E

plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 BT138Y-800E