CLF1G0060(S)-30：宽带RF功率GaN HEMT _ BDTIC 中国领先电子元器件代理商

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CLF1G0060(S)-30：宽带RF功率GaN HEMT

CLF1G0060-30和CLF1G0060S-30是宽带通用30 W放大器，采用了恩智浦的第1代GaN HEMT技术。工作频率为DC至6.0 GHz。

特性和优势

工作频率为DC至6.0 GHz
30 W通用宽带RF功率GaN HEMT
极佳的强度(VSWR 10 : 1)
高电压操作(50 V)
热增强封装

应用

商业无线基础设施（蜂窝、WiMAX）
雷达
宽带通用放大器
公共移动无线电
工业、科学、医疗
干扰器
EMC测试
国防应用

关键参数

型号	Package version	f_range [min] (MHz)	f_range [max] (MHz)	P_L(1dB) (W)	V_DS (V)	η (%)	G_P (dB)	Test signal	Product status
CLF1G0060-30	SOT1227A	0	6000	30	50	59	15.9	Pulsed RF; Pulsed RF	Development
CLF1G0060S-30	SOT1227B	0	6000	30	50	59	15.9	Pulsed RF; Pulsed RF	Development

封装与包装

型号	封装	Outline version	Reflow-/Wave soldering	包装	产品状态	标示	可订购的器件编号, (订购码 (12NC))
CLF1G0060-30	CDFM2 (SOT1227A)	sot1227a_po		Bulk Pack	开发中	Standard Marking	CLF1G0060-30U( 9340 671 81112 )
CLF1G0060S-30	CDFM2 (SOT1227B)	sot1227b_po		Bulk Pack	开发中	Standard Marking	CLF1G0060S-30U( 9340 671 82112 )

无铅环保信息

型号	可订购的器件编号	RoHS / RHF	无铅转换日期	潮湿敏感度等级	MSL LF
CLF1G0060-30	CLF1G0060-30U		Always Pb-free		NA
CLF1G0060S-30	CLF1G0060S-30U		Always Pb-free		NA

文档资料

档案名称	标题	类型	格式	日期
CLF1G0060-30_1G0060S-30 (中文)	Broadband RF power GaN HEMT	Data sheet	pdf	2013-06-20
fatigue_in_aluminum_bond_wires	Fatigue in aluminum bond wires	Mounting and soldering	pdf	2009-10-08
NXP_RF_manual_19th_edition	RF Manual 19th edition: Application and design manual for High Performance RF products May 2015	Other type	pdf	2015-05-19
Application_Measurement_Report_CLF1G0060-30_3100-3500MHz_CA-278-12	Application Measurement Report CLF1G0060-30 3100-3500 MHz CA-278-12	Report	pdf	2015-06-23
NXP_RFpower_Lib_V09p0	RF Power Model Library for Microwave Office®	Simulation model	zip	2014-11-11
NXP_RFpower_Manual_MWO_20141111	RF Power Model Library Manual and Installation Instructions for Microwave Office®	Simulation model	pdf	2014-11-11
NXP_RFPower_Simulation_Example	RF Power Simulation Example for Microwave Office®	Simulation model	zip	2012-06-11
CLF1G0060-30_ADS-2011_Model	CLF1G0060-30 ADS-2011 Model	Simulation model	zip	2013-03-04
CLF1G0060-30_ADS-2009_Model	CLF1G0060-30 ADS-2009 Model	Simulation model	zip	2013-03-04
NXP_CLF1G0060_30_V0p1_Spar_Vgs_2n2_Vd_50_Idq_50mA_10Mto8GHz	CLF1G0060-30 50V 50mA S-parameter Data	S-parameter	s2p	2012-04-04
sot1227b_po	Earless Flanged ceramic package; 2 leads	Outline drawing	pdf	2013-06-13
sot1227a_po	Flanged ceramic package; 2 mounting holes; 2 leads	Outline drawing	pdf	2013-06-13

订购信息

型号	订购码 (12NC)	可订购的器件编号
CLF1G0060-30	9340 671 81112	CLF1G0060-30U
CLF1G0060S-30	9340 671 82112	CLF1G0060S-30U

模型

标题	类型	日期
RF Power Model Library for Microwave Office®	Simulation model	2014-11-11
RF Power Model Library Manual and Installation Instructions for Microwave Office®	Simulation model	2014-11-11
RF Power Simulation Example for Microwave Office®	Simulation model	2012-06-11
CLF1G0060-30 ADS-2011 Model	Simulation model	2013-03-04
CLF1G0060-30 ADS-2009 Model	Simulation model	2013-03-04
CLF1G0060-30 50V 50mA S-parameter Data	S-parameter	2012-04-04

Broadband RF power GaN HEMT CLF1G0060_S_30

Broadband RF power GaN HEMT CLF1G0060_S_30

Broadband RF power GaN HEMT CLF1G0060_S_30

Fatigue in aluminum bond wires gan_devices

RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf

Application Measurement Report CLF1G0060-30 3100-3500 MHz CA-278-12 CLF1G0060_S_30

Earless Flanged ceramic package; 2 leads CLF1G0060_S_30

Flanged ceramic package; 2 mounting holes; 2 leads CLF1G0060_S_30

RF Power Model Library for Microwave Office® CLF1G0060_S_30

RF Power Model Library Manual and Installation Instructions for Microwave Office® CLF1G0060_S_30

RF Power Simulation Example for Microwave Office® CLF1G0060_S_30

CLF1G0060-30 ADS-2011 Model CLF1G0060_S_30

CLF1G0060-30 ADS-2009 Model CLF1G0060_S_30

CLF1G0060-30 50V 50mA S-parameter Data CLF1G0060_S_30

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