MD7IC2250N: 2110-2170 MHz,5.3 W平均值,28 V单载波W-CDMA LDMOS射频宽带集成功率放大器

特性
  • 提供串联等效大信号阻抗参数和共源S参数
  • 片上匹配(50 Ohm隔直输入)
  • 集成静态电流温度补偿,具有启用/禁用功能
  • 集成的ESD保护
  • 专为数字预失真纠错系统而设计
  • 为Doherty应用进行了优化
  • 可耐225°C高温的塑料封装
  • 符合RoHS规范
  • 采用盘卷包装。R1后缀 = 500个,44 mm卷带宽度,13英寸卷盘。
TO-272 WB-14, TO-270 WB-14, TO-270 WB-14 Gull Package Image
数据手册 (1)
名称/描述Modified Date
MD7IC2250NR1, MD7IC2250GNR1, MD7IC2250NBR1 2110-2170 MHz, 5.3 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated... (REV 0) PDF (722.7 kB) MD7IC2250N [English]22 Dec 2010
应用说明 (5)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907 [English]13 May 2009
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN3789 [English]12 Mar 2009
Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (8.2 MB) AN3263 [English]07 Jun 2006
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 (REV 0) PDF (112.8 kB) AN1977 [English]09 Oct 2003
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
白皮书 (1)
名称/描述Modified Date
Advances in Airfast® RFICs White Paper (REV 0) PDF (149.2 kB) AIRFASTWBFWP [English]15 May 2015
封装信息 (3)
名称/描述Modified Date
98ASA10650D, TO, 17.65x9.25x2.59, Pitch 0.36, 14 Pins (REV B) PDF (72.7 kB) 98ASA10650D [English]18 Mar 2016
98ASA10649D, TO, 23.65x9.25x2.59, Pitch 9.02, 14 Pins (REV B) PDF (71.4 kB) 98ASA10649D [English]26 Feb 2016
98ASA10653D, TO, 17.6x9.3x2.59, Pitch 1.02, 14 Pins (REV B) PDF (77.4 kB) 98ASA10653D [English]26 Feb 2016
参考设计
订购信息
型号状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
MD7IC2250GNR1Active211021702847.3545.3 @ AVGW-CDMA31.1 @ 217016.81.1I/OAB, CLDMOS
MD7IC2250NBR1Active211021702847.3545.3 @ AVGW-CDMA31.1 @ 217016.81.1I/OAB, CLDMOS
MD7IC2250NR1No Longer Manufactured211021702847.3545.3 @ AVGW-CDMA31.1 @ 217016.81.1I/OAB, CLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询MSLPPT (°C)
TO-270 WB-14 GULL98ASA10653DMPQ - 500 REELPOQ - 500 REELActiveMD7IC2250GNR1MD7IC2250GNR1.pdf3260
TO-272 WB-14 LEAD98ASA10649DMPQ - 500 REELPOQ - 500 REELActiveMD7IC2250NBR1MD7IC2250NBR1.pdf3260
TO-270 WB-14 LEAD98ASA10650DMPQ - 500 REELPOQ - 500 REELNo Longer ManufacturedMD7IC2250NR1MD7IC2250NR1.pdf3260
MD7IC2250NR1, MD7IC2250GNR1, MD7IC2250NBR1 2110-2170 MHz, 5.3 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated... MD7IC2250N
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n
Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 MMRF2010N
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
Advances in Airfast® RFICs White Paper MW7IC2725N
2110-2170 MHz,4.0 W平均值,28 V,44.8 dB W-CDMA智能演示参考设计 MMG15241H
98ASA10653D, TO, 17.6x9.3x2.59, Pitch 1.02, 14 Pins MMRF2010N
MD7IC2250GNR1.pdf MD7IC2250N
98ASA10649D, TO, 23.65x9.25x2.59, Pitch 9.02, 14 Pins MD7IC2250N
MD7IC2250NBR1.pdf MD7IC2250N
98ASA10650D, TO, 17.65x9.25x2.59, Pitch 0.36, 14 Pins MMRF2010N
MD7IC2250NR1.pdf MD7IC2250N