MHT2000N: 2450 MHz、25 W连续波、28 V射频集成PA，适用于消费电子和商用烹饪 _ BDTIC 中国领先电子元器件代理商

MHT2000N: 2450 MHz、25 W连续波、28 V射频集成PA，适用于消费电子和商用烹饪

特性

典型连续波性能：VDD = 28 Vdc，IDQ1 = 55 mA，IDQ2 = 195 mA，连续波输出功率 = 25 W，f = 2450 MHz 功率增益：27.7 dB 功率附加效率：43.8%
在28 Vdc，2450 MHz，25 W连续波输出功率时，能承受10:1 VSWR
多级架构的额定工作电压为26至32 V
集成静态电流温度补偿，具有启用/禁用功能
集成的ESD保护
卓越的热稳定性
可耐225°C高温的塑料封装
符合RoHS规范。
采用盘卷包装。R1后缀 = 500个，44 mm卷带宽度，13英寸卷盘。

TO-270 WB-16 Straight and Gull Package Image

数据手册 (1)

名称/描述	Modified Date
MHT2000NR1, MHT2000GNR1 2450 MHz, 25 W CW, 28 V Industrial Heating, Rugged RF LDMOS Integrated Power Amplifiers - Data... (REV 0) PDF (1.0 MB) MHT2000N [English]	30 May 2014

应用说明 (5)

名称/描述	Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]	29 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907 [English]	13 May 2009
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN3789 [English]	12 Mar 2009
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 (REV 1) PDF (111.6 kB) AN1987 [English]	12 May 2004
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 (REV 0) PDF (112.8 kB) AN1977 [English]	09 Oct 2003

工程设计要点 (1)

名称/描述	Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]	19 Jan 2004

选型工具指南 (1)

名称/描述	Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]	26 May 2016

封装信息 (2)

名称/描述	Modified Date
98ASA10754D, TO-WB, 17.6x9.15x2.59, Pitch 14.0, 16 Pins (REV D) PDF (79.3 kB) 98ASA10754D [English]	21 Mar 2016
98ASA10755D, 1887-01, TO-270 Wide Body, 16 Lead Gull Wing (REV A) PDF (50.6 kB) 98ASA10755D [English]	31 Aug 2007

订购信息

型号	状态	Frequency Min (Min) (MHz)	Frequency Max (Max) (MHz)	供电电压 (Typ) (V)	P1dB (Typ) (dBm)	P1dB (Typ) (W)	输出功率 (Typ) (W) @ Intermodulation Level at Test Signal	测试信号	功率增益 (Typ) (dB) @ f (MHz)	效率 (Typ) (%)	热阻 (Spec)(°C/W)	匹配	类型	模具技术
MHT2000NR1	Active	2450	2450	28	44	25	25 @ CW	1-Tone	27.7 @ 2450	43.8	1.2	I/O	AB	LDMOS
MHT2000GNR1	Active	2450	2450	28	44	25	25 @ CW	1-Tone	27.7 @ 2450	43.8	1.2	I/O	AB	LDMOS

封装环保信息

封装说明	Outline Version	包装	产品状态	部件编号	化学成分	RoHS / Pb Free中国RoHS查询	MSL	PPT (°C)
TO-270 WB-16 GULL	98ASA10755D	MPQ - 500 REELPOQ - 500 BOX	Active	MHT2000GNR1	MHT2000GNR1.pdf		3	260
TO-270 WB-16 PLASTIC	98ASA10754D	MPQ - 500 REELPOQ - 500 BOX	Active	MHT2000NR1	MHT2000NR1.pdf		3	260

MHT2000NR1, MHT2000GNR1 2450 MHz, 25 W CW, 28 V Industrial Heating, Rugged RF LDMOS Integrated Power Amplifiers - Data... MHT2000N

AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n

Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 MMRF2010N

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 MMRF2010N

Using Data Sheet Impedances for RF LDMOS Devices mrf1570n

RF Products Selector Guide MMT20303H

98ASA10755D, 1887-01, TO-270 Wide Body, 16 Lead Gull Wing MMRF2005N

MHT2000GNR1.pdf MHT2000N

98ASA10754D, TO-WB, 17.6x9.15x2.59, Pitch 14.0, 16 Pins MMRF2005N

MHT2000NR1.pdf MHT2000N

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