MMRF1005H: 1300 MHz, 250 W, 50 V Lateral N-Channel RF Power MOSFETs

Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 50 VDD Operation
Characterized from 20 V to 50 V for Extended Power Range
Integrated ESD Protection
Greater Negative Gate-Source Voltage Range for Improved Class C Operation
RoHS Compliant
In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13-inch Reel.
These products are included in Our product longevity program with assured supply for a minimum of 10 years after launch.

型号	状态	状态	Frequency Min (Min) (MHz)	Frequency Max (Max) (MHz)	供电电压 (Typ) (V)	P1dB (Typ) (dBm)	P1dB (Typ) (W)	输出功率 (Typ) (W) @ Intermodulation Level at Test Signal	测试信号	功率增益 (Typ) (dB) @ f (MHz)	效率 (Typ) (%)	热阻 (Spec)(°C/W)	匹配	类型	模具技术
MMRF1005HSR5	Active		1200	1400	50	54	250	250 @ Peak	Pulse	22.7 @ 1300	57	0.07	Input	AB	LDMOS
MMRF1005HR5	Active		1200	1400	50	54	250	250 @ Peak	Pulse	22.7 @ 1300	57	0.07	Input	AB	LDMOS

封装说明	Outline Version	包装	产品状态	部件编号	化学成分	RoHS / Pb Free中国RoHS查询	PPT (°C)
NI-780	98ASB15607C	MPQ - 50 REELPOQ - 50 REEL	Active	MMRF1005HR5	MMRF1005HR5.pdf		260
NI-780S	98ASB16718C	MPQ - 50 REELPOQ - 50 REEL	Active	MMRF1005HSR5	MMRF1005HSR5.pdf		260