MMRF1012N: 10-450 MHz, 10 W, 50 V Broadband RF Power MOSFET

特性
  • Typical CW Performance at 220 MHz: VDD = 50 Vdc, IDQ = 30 mA, Pout = 10 W Power Gain: 23.9 dB Drain Efficiency: 62%
  • Capable of Handling 10:1 VSWR @ 50 Vdc, 220 MHz, 10 W CW Output Power
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • Qualified Up to a Maximum of 50 VDD Operation
  • Integrated ESD Protection
  • 225°C Capable Plastic Package
  • RoHS Compliant
  • In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13-inch Reel.
TO-270-2 Package Image
数据手册 (1)
名称/描述Modified Date
MMRF1012NR1 10-450 MHz, 10 W, 50 V Broadband RF Power MOSFET - Data Sheet (REV 0) PDF (1.4 MB) MMRF1012N [English]24 Jul 2014
应用说明 (2)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907 [English]13 May 2009
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
手册 (1)
名称/描述Modified Date
RF Aerospace and Defense Solutions Brochure (REV 4.1) PDF (1.6 MB) BR1611 [English]16 May 2016
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
封装信息 (1)
名称/描述Modified Date
98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins (REV R) PDF (80.5 kB) 98ASH98117A [English]26 Feb 2016
订购信息
型号状态状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
MMRF1012NR1Active1045050401010 @ CW1-Tone23.9 @ 220623UnmatchedABLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询MSLPPT (°C)
TO-270-298ASH98117AMPQ - 500 REELPOQ - 500 BOXActiveMMRF1012NR1MMRF1012NR1.pdf3260
MMRF1012NR1 10-450 MHz, 10 W, 50 V Broadband RF Power MOSFET - Data Sheet MMRF1012N
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Aerospace and Defense Solutions Brochure MMRF5300N
RF Products Selector Guide MMT20303H
98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins aft09ms031n
MMRF1012NR1.pdf MMRF1012N