MMRF1014N: 1-2000 MHz, 4 W, 28 V Class A/AB RF Power MOSFET

特性
  • Typical Two-Tone Performance @ 1960 MHz, 28 Vdc, IDQ = 50 mA, Pout = 4 W PEP Power Gain: 18 dB Drain Efficiency: 33% IMD: –34 dBc
  • Typical Two-Tone Performance @ 900 MHz, 28 Vdc, IDQ = 50 mA, Pout = 4 W PEP Power Gain: 19 dB Drain Efficiency: 33% IMD: –39 dBc
  • Capable of Handling 5:1 VSWR @ 28 Vdc, 1960 MHz, 4 W CW Output Power
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • On-Chip RF Feedback for Broadband Stability
  • Integrated ESD Protection
  • RoHS Compliant
  • In Tape and Reel. T1 Suffix = 1,000 Units,16 mm Tape Width, 7-inch Reel.
PLD-1.5W Image
数据手册 (1)
名称/描述Modified Date
MMRF1014NT1 1-2000 MHz, 4 W, 28 V Class A/AB RF Power MOSFET - Data Sheet (REV 0) PDF (720.9 kB) MMRF1014N [English]24 Jul 2014
应用说明 (1)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
手册 (1)
名称/描述Modified Date
RF Aerospace and Defense Solutions Brochure (REV 4.1) PDF (1.6 MB) BR1611 [English]16 May 2016
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
封装信息 (1)
名称/描述Modified Date
98ASB15740C, PLD, 6.2x7.0x1.74, Pitch 7.09, 3 Pins (REV E) PDF (51.5 kB) 98ASB15740C [English]22 Mar 2016
订购信息
型号状态状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
MMRF1014NT1Active12000283644 @ PEP2-Tone18 @ 1960338.8UnmatchedA, ABLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询MSLPPT (°C)
PLD-1.598ASB15740CMPQ - 1000 REELPOQ - 1000 BOXActiveMMRF1014NT1MMRF1014NT1.pdf3260
MMRF1014NT1 1-2000 MHz, 4 W, 28 V Class A/AB RF Power MOSFET - Data Sheet MMRF1014N
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Aerospace and Defense Solutions Brochure MMRF5300N
RF Products Selector Guide MMT20303H
98ASB15740C, PLD, 6.2x7.0x1.74, Pitch 7.09, 3 Pins MRFG35003N6AT1
MMRF1014NT1.pdf MMRF1014N