MMRF1019N: 1090 MHz, 10 W, 50 V Pulse RF Power LDMOS Transistor _ BDTIC 中国领先电子元器件代理商

MMRF1019N: 1090 MHz, 10 W, 50 V Pulse RF Power LDMOS Transistor

特性

Typical Pulse Performance: VDD = 50 Vdc, IDQ = 10 mA, Pout = 10 W Peak (2 W Avg.), f = 1090 MHz, Pulse Width = 100 µsec, Duty Cycle = 20% Power Gain: 25 dB Drain Efficiency: 69%
Characterized with Series Equivalent Large-Signal Impedance Parameters
Qualified Up to a Maximum of 50 VDD Operation
Integrated ESD Protection
Greater Negative Gate-Source Voltage Range for Improved Class C Operation
RoHS Compliant
In Tape and Reel. R4 Suffix = 100 Units, 16 mm Tape Width, 7-inch Reel.

PLD-1.5W Image

数据手册 (1)

名称/描述	Modified Date
MMRF1019NR4 1090 MHz, 10 W, 50 V Pulse RF Power LDMOS Transistor - Data Sheet (REV 0) PDF (416.2 kB) MMRF1019N [English]	24 Jul 2014

手册 (1)

名称/描述	Modified Date
RF Aerospace and Defense Solutions Brochure (REV 4.1) PDF (1.6 MB) BR1611 [English]	16 May 2016

订购信息

型号	状态	状态	Frequency Min (Min) (MHz)	Frequency Max (Max) (MHz)	供电电压 (Typ) (V)	P1dB (Typ) (dBm)	P1dB (Typ) (W)	输出功率 (Typ) (W) @ Intermodulation Level at Test Signal	测试信号	功率增益 (Typ) (dB) @ f (MHz)	效率 (Typ) (%)	热阻 (Spec)(°C/W)	匹配	类型	模具技术
MMRF1019NR4	Active		960	1400	50	40	10	10 @ Peak	Pulse	25 @ 1090	69	1.6	I/O	AB	LDMOS

封装环保信息

封装说明	Outline Version	包装	产品状态	部件编号	化学成分	RoHS / Pb Free中国RoHS查询	MSL	PPT (°C)
PLD-1.5	98ASB15740C	MPQ - 100 REELPOQ - 100 BOX	Active	MMRF1019NR4	MMRF1019NR4.pdf		3	260

MMRF1019NR4 1090 MHz, 10 W, 50 V Pulse RF Power LDMOS Transistor - Data Sheet MMRF1019N

RF Aerospace and Defense Solutions Brochure MMRF5300N

98ASB15740C, PLD, 6.2x7.0x1.74, Pitch 7.09, 3 Pins MRFG35003N6AT1

MMRF1019NR4.pdf MMRF1019N

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