MMRF1021N: 136-941 MHz, 7 W, 7.5 V Wideband RF Power LDMOS Transistor

特性
  • Characterized for Operation from 136 to 941 MHz
  • Unmatched Input and Output Allowing Wide Frequency Range Utilization
  • Integrated ESD Protection
  • Integrated Stability Enhancements
  • Wideband — Full Power Across the Band
  • Exceptional Thermal Performance
  • Extreme Ruggedness
  • High Linearity for: TETRA, SSB
  • RoHS Compliant
  • In Tape and Reel. T1 Suffix = 1,000 Units, 16 mm Tape Width, 7-inch Reel.
特性
  • Output Stage VHF Band Handheld Radio
  • Output Stage UHF Band Handheld Radio
  • Output Stage for 700-800 MHz Handheld Radio
PLD-1.5W Image
数据手册 (1)
名称/描述Modified Date
MMRF1021NT1 136-941 MHz, 7 W, 7.5 V Wideband RF Power LDMOS Transistor - Data Sheet (REV 0) PDF (958.4 kB) MMRF1021N [English]24 Jul 2014
应用说明 (1)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
手册 (1)
名称/描述Modified Date
RF Aerospace and Defense Solutions Brochure (REV 4.1) PDF (1.6 MB) BR1611 [English]16 May 2016
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
封装信息 (1)
名称/描述Modified Date
98ASA00476D, PLD, 6.6x5.84x1.74, Pitch 4.6, 3 Pins (REV A) PDF (55.3 kB) 98ASA00476D [English]15 Feb 2016
订购信息
型号状态状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
MMRF1021NT1Active1369417.538.67.37.3 @ CW1-Tone15.2 @ 870711.1UnmatchedABLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询MSLPPT (°C)
PLD-1.5W98ASA00476DMPQ - 1000 REELPOQ - 1000 BOXActiveMMRF1021NT1MMRF1021NT1.pdf3260
MMRF1021NT1 136-941 MHz, 7 W, 7.5 V Wideband RF Power LDMOS Transistor - Data Sheet MMRF1021N
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Aerospace and Defense Solutions Brochure MMRF5300N
RF Products Selector Guide MMT20303H
98ASA00476D, PLD, 6.6x5.84x1.74, Pitch 4.6, 3 Pins aft09ms015n
MMRF1021NT1.pdf MMRF1021N