MMRF1022HS: 2110-2170 MHz, 63 W Avg., 28 V RF Power LDMOS Transistor

特性
  • Advanced high performance in-package Doherty
  • Greater negative gate-source voltage range for improved Class C operation
  • Designed for digital predistortion error correction systems
  • RoHS compliant
NI-1230S-4L2L Package Image
数据手册 (1)
名称/描述Modified Date
MMRF1022HS 2110-2170 MHz, 63 W Avg, 28 V Data Sheet (REV 0) PDF (439.4 kB) MMRF1022HS [English]04 Apr 2016
应用说明 (1)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
手册 (1)
名称/描述Modified Date
RF Aerospace and Defense Solutions Brochure (REV 4.1) PDF (1.6 MB) BR1611 [English]16 May 2016
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
封装信息 (1)
名称/描述Modified Date
98ASA00513D, NI-1230-4LS2L (REV A) PDF (44.6 kB) 98ASA00513D [English]10 Mar 2013
订购信息
型号状态状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
MMRF1022HSR5Active211021702854.830163 @ AVGW-CDMA16.2 @ 214051.80.33I/OAB, CLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询PPT (°C)
NI-1230S-4L2L98ASA00513DMPQ - 50 REELPOQ - 50 BOXActiveMMRF1022HSR5MMRF1022HSR5.pdf260
MMRF1022HS 2110-2170 MHz, 63 W Avg, 28 V Data Sheet MMRF1022HS
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Aerospace and Defense Solutions Brochure MMRF5300N
RF Products Selector Guide MMT20303H
98ASA00513D, NI-1230-4LS2L MMRF1024HS
MMRF1022HSR5.pdf MMRF1022HS