MMRF1304N: 1.8-2000 MHz, 25 W, 50 V Wideband RF Power LDMOS Transistors

特性
  • Wide Operating Frequency Range
  • Extreme Ruggedness
  • Unmatched, Capable of Very Broadband Operation
  • Integrated Stability Enhancements
  • Low Thermal Resistance
  • Extended ESD Protection Circuit
  • RoHS Compliant
  • In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13-inch Reel.
  • These products are included in Our product longevity program with assured supply for a minimum of 15 years after launch.
TO-270-2, TO-270G-2 Package Image
数据手册 (1)
名称/描述Modified Date
MMRF1304NR1, MMRF1304GNR1 1.8-2000 MHz, 25 W, 50 V Wideband RF Power LDMOS Transistors - Data Sheet (REV 0) PDF (413.9 kB) MMRF1304N [English]19 Dec 2013
应用说明 (3)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907 [English]13 May 2009
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN3789 [English]12 Mar 2009
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
手册 (1)
名称/描述Modified Date
RF Aerospace and Defense Solutions Brochure (REV 4.1) PDF (1.6 MB) BR1611 [English]16 May 2016
封装信息 (2)
名称/描述Modified Date
98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins (REV D) PDF (86.0 kB) 98ASA99301D [English]30 Mar 2016
98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins (REV R) PDF (80.5 kB) 98ASH98117A [English]26 Feb 2016
订购信息
型号状态状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
MMRF1304NR1Active1.8200050442525 @ CWCW25.5 @ 51274.71.2UnmatchedABLDMOS
MMRF1304GNR1Active1.8200050442525 @ CWCW25.5 @ 51274.71.2UnmatchedABLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询MSLPPT (°C)
TO-270-2 GULL98ASA99301DMPQ - 500 REELPOQ - 500 REELActiveMMRF1304GNR1MMRF1304GNR1.pdf3260
TO-270-298ASH98117AMPQ - 500 REELPOQ - 500 REELActiveMMRF1304NR1MMRF1304NR1.pdf3260
MMRF1304NR1, MMRF1304GNR1 1.8-2000 MHz, 25 W, 50 V Wideband RF Power LDMOS Transistors - Data Sheet MMRF1304N
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Aerospace and Defense Solutions Brochure MMRF5300N
98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins aft09ms031n
MMRF1304GNR1.pdf MMRF1304N
98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins aft09ms031n
MMRF1304NR1.pdf MMRF1304N