MMRF1304N: 1.8-2000 MHz, 25 W, 50 V Wideband RF Power LDMOS Transistors _ BDTIC 中国领先电子元器件代理商

MMRF1304N: 1.8-2000 MHz, 25 W, 50 V Wideband RF Power LDMOS Transistors

特性

Wide Operating Frequency Range
Extreme Ruggedness
Unmatched, Capable of Very Broadband Operation
Integrated Stability Enhancements
Low Thermal Resistance
Extended ESD Protection Circuit
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13-inch Reel.
These products are included in Our product longevity program with assured supply for a minimum of 15 years after launch.

TO-270-2, TO-270G-2 Package Image

数据手册 (1)

名称/描述	Modified Date
MMRF1304NR1, MMRF1304GNR1 1.8-2000 MHz, 25 W, 50 V Wideband RF Power LDMOS Transistors - Data Sheet (REV 0) PDF (413.9 kB) MMRF1304N [English]	19 Dec 2013

应用说明 (3)

名称/描述	Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]	29 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907 [English]	13 May 2009
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN3789 [English]	12 Mar 2009

工程设计要点 (1)

名称/描述	Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]	19 Jan 2004

手册 (1)

名称/描述	Modified Date
RF Aerospace and Defense Solutions Brochure (REV 4.1) PDF (1.6 MB) BR1611 [English]	16 May 2016

封装信息 (2)

名称/描述	Modified Date
98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins (REV D) PDF (86.0 kB) 98ASA99301D [English]	30 Mar 2016
98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins (REV R) PDF (80.5 kB) 98ASH98117A [English]	26 Feb 2016

订购信息

型号	状态	状态	Frequency Min (Min) (MHz)	Frequency Max (Max) (MHz)	供电电压 (Typ) (V)	P1dB (Typ) (dBm)	P1dB (Typ) (W)	输出功率 (Typ) (W) @ Intermodulation Level at Test Signal	测试信号	功率增益 (Typ) (dB) @ f (MHz)	效率 (Typ) (%)	热阻 (Spec)(°C/W)	匹配	类型	模具技术
MMRF1304NR1	Active		1.8	2000	50	44	25	25 @ CW	CW	25.5 @ 512	74.7	1.2	Unmatched	AB	LDMOS
MMRF1304GNR1	Active		1.8	2000	50	44	25	25 @ CW	CW	25.5 @ 512	74.7	1.2	Unmatched	AB	LDMOS

封装环保信息

封装说明	Outline Version	包装	产品状态	部件编号	化学成分	RoHS / Pb Free中国RoHS查询	MSL	PPT (°C)
TO-270-2 GULL	98ASA99301D	MPQ - 500 REELPOQ - 500 REEL	Active	MMRF1304GNR1	MMRF1304GNR1.pdf		3	260
TO-270-2	98ASH98117A	MPQ - 500 REELPOQ - 500 REEL	Active	MMRF1304NR1	MMRF1304NR1.pdf		3	260

MMRF1304NR1, MMRF1304GNR1 1.8-2000 MHz, 25 W, 50 V Wideband RF Power LDMOS Transistors - Data Sheet MMRF1304N

AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n

Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n

Using Data Sheet Impedances for RF LDMOS Devices mrf1570n

RF Aerospace and Defense Solutions Brochure MMRF5300N

98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins aft09ms031n

MMRF1304GNR1.pdf MMRF1304N

98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins aft09ms031n

MMRF1304NR1.pdf MMRF1304N

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