MMRF1314H: 1200-1400 MHz, 1000 W Peak, 52 V Airfast® RF Power LDMOS Transistors

特性
  • Internally input and output matched for broadband operation and ease of use
  • Device can be used in a single-ended, push-pull, or quadrature configuration
  • Qualified up to a maximum of 52 VDD operation
  • High ruggedness, handles > 20:1 VSWR
  • Integrated ESD protection with greater negative voltage range for improved Class C operation and gate voltage pulsing
  • Characterized with series equivalent large-signal impedance parameters
  • RoHS Compliant
特性
  • Military and commercial L-Band radar systems
NI-1230H-4S, NI-1230S-4S, NI-1230GS-4L Package Image
数据手册 (1)
名称/描述Modified Date
MMRF1314H 1200-1400 MHz, 1000 W Peak, 52 V Data Sheet (REV 0) PDF (435.4 kB) MMRF1314H [English]25 Mar 2016
应用说明 (2)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages (REV 1) PDF (664.6 kB) AN1908 [English]24 Feb 2011
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
手册 (1)
名称/描述Modified Date
RF Aerospace and Defense Solutions Brochure (REV 4.1) PDF (1.6 MB) BR1611 [English]16 May 2016
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
封装信息 (2)
名称/描述Modified Date
98ASB16977C, NI-C, 41.15x10.16x4.19, Pitch 13.72, 5 Pins (REV G) PDF (47.5 kB) 98ASB16977C [English]05 Apr 2016
98ARB18247C, NI-C, 32.26x10.16x4.19, Pitch 13.72, 5 Pins (REV H) PDF (44.6 kB) 98ARB18247C [English]23 Feb 2016
支持信息 (1)
名称/描述Modified Date
RF Military High Power Avionics Devices (REV 0) PDF (726.5 kB) MILITARY_HIGH_POWER_RADAR_TRN_SI [English]25 Mar 2016
订购信息
型号状态状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
MMRF1314HSR5Active12001400526010001000 @ PeakPulse15.5 @ 120046.50.018I/OABLDMOS
MMRF1314GSR5Active12001400526010001000 @ PeakPulse15.5 @ 120046.50.018I/OABLDMOS
MMRF1314HR5Active12001400526010001000 @ PeakPulse15.5 @ 120046.50.018I/OABLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询PPT (°C)
NI-1230-4S GULL98ASA00459DMPQ - 50 REELPOQ - 50 BOXActiveMMRF1314GSR5MMRF1314GSR5.pdf260
NI-123098ASB16977CMPQ - 50 REELPOQ - 50 BOXActiveMMRF1314HR5MMRF1314HR5.pdf260
NI-1230S98ARB18247CMPQ - 50 REELPOQ - 50 BOXActiveMMRF1314HSR5MMRF1314HSR5.pdf260
MMRF1314H 1200-1400 MHz, 1000 W Peak, 52 V Data Sheet MMRF1314H
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages MMRF1317H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Aerospace and Defense Solutions Brochure MMRF5300N
RF Products Selector Guide MMT20303H
RF Military High Power Avionics Devices MMRF2010N
98ASA00459D, NI-C, 32.26x10.16x4.24, Pitch 13.72, 5 Pins mrfe6vp61k25h
MMRF1314GSR5.pdf MMRF1314H
98ASB16977C, NI-C, 41.15x10.16x4.19, Pitch 13.72, 5 Pins MMRF1317H
MMRF1314HR5.pdf MMRF1314H
98ARB18247C, NI-C, 32.26x10.16x4.19, Pitch 13.72, 5 Pins MMRF1317H
MMRF1314HSR5.pdf MMRF1314H