MMRF1318N: 10-600 MHz, 300 W CW, 50 V Broadband RF Power LDMOS Transistor

特性
  • Characterized with series equivalent large-signal impedance parameters
  • Qualified for operation at 50 Vdc
  • Integrated ESD protection
  • Greater negative gate-source voltage range for improved Class C operation
  • RoHS Compliant
  • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13-inch Reel.
TO-270WB-4 Package Image
数据手册 (1)
名称/描述Modified Date
MMRF1318NR1 10-600 MHz, 300 W, 50 V Broadband RF Power LDMOS Transistor Data Sheet (REV 0) PDF (599.8 kB) MMRF1318N [English]17 Dec 2014
应用说明 (3)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907 [English]13 May 2009
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN3789 [English]12 Mar 2009
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
手册 (1)
名称/描述Modified Date
RF Aerospace and Defense Solutions Brochure (REV 4.1) PDF (1.6 MB) BR1611 [English]16 May 2016
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
封装信息 (1)
名称/描述Modified Date
98ASA10577D, TO, 17.53x9.02x2.59, Pitch 5.38, 5 Pins (REV F) PDF (75.9 kB) 98ASA10577D [English]18 Jan 2016
订购信息
型号状态状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
MMRF1318NR1Active106005054.8300300 @ CWCW22 @ 450600.24UnmatchedABLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询MSLPPT (°C)
TO-270 WB-498ASA10577DMPQ - 500 REELPOQ - 500 BOXActiveMMRF1318NR1MMRF1318NR1.pdf3260
MMRF1318NR1 10-600 MHz, 300 W, 50 V Broadband RF Power LDMOS Transistor Data Sheet MMRF1318N
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Aerospace and Defense Solutions Brochure MMRF5300N
RF Products Selector Guide MMT20303H
98ASA10577D, TO, 17.53x9.02x2.59, Pitch 5.38, 5 Pins aft09mp055n
MMRF1318NR1.pdf MMRF1318N