MMRF2004NB: 2500-2700 MHz, 4 W Avg., 28 V WiMAX RF LDMOS Wideband Integrated Power Amplifier

特性
  • Typical WiMAX Performance: VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 4 W Avg., f = 2700 MHz, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Power Gain: 28.5 dB Power Added Efficiency: 17% Device Output Signal PAR: 9 dB @ 0.01% Probability on CCDF ACPR @ 8.5 MHz Offset: –50 dBc in 1 MHz Channel Bandwidth
特性
  • Typical WiMAX Performance: VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 26 dBm Avg., f = 2700 MHz, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Power Gain: 27.8 dB Power Added Efficiency: 3.2% Device Output Signal PAR: 9 dB @ 0.01% Probability on CCDF ACPR @ 8.5 MHz Offset: –56 dBc in 1 MHz Channel Bandwidth
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 2600 MHz, 40 W CW Output Power (3 dB Input Overdrive from Rated Pout)
  • Stable into a 5:1 VSWR. All Spurs Below –60 dBc @ 100 mW to 5 W CW Pout
  • Typical Pout @ 1 dB Compression Point ≃ 25 W CW
  • 100% PAR Tested for Guaranteed Output Power Capability
  • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
  • On-Chip Matching (50 Ohm Input, DC Blocked)
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
  • Integrated ESD Protection
  • 225°C Capable Plastic Package
  • RoHS Compliant
  • In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13-inch Reel.
TO-272 WB-16 Package Image
数据手册 (1)
名称/描述Modified Date
MMRF2004NBR1 2500-2700 MHz, 4 W Avg., 28 V WiMAX RF LDMOS Wideband Integrated Power Amplifier - Data Sheet (REV 0) PDF (753.4 kB) MMRF2004NB [English]27 Dec 2013
应用说明 (4)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (8.2 MB) AN3263 [English]07 Jun 2006
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 (REV 1) PDF (111.6 kB) AN1987 [English]12 May 2004
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 (REV 0) PDF (112.8 kB) AN1977 [English]09 Oct 2003
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
手册 (1)
名称/描述Modified Date
RF Aerospace and Defense Solutions Brochure (REV 4.1) PDF (1.6 MB) BR1611 [English]16 May 2016
封装信息 (1)
名称/描述Modified Date
98ARH99164A, TO-WB, 9.02x23.62x2.59, Pitch 0.04, 17 Pins (REV R) PDF (81.8 kB) 98ARH99164A [English]29 Feb 2016
订购信息
型号状态状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
MMRF2004NBR1Active250027002844254 @ AVGWiMAX28.5 @ 2700171.4I/OABLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询MSLPPT (°C)
TO-272 WB-1698ARH99164AMPQ - 500 REELPOQ - 500 BOXActiveMMRF2004NBR1MMRF2004NBR1.pdf3260
MMRF2004NBR1 2500-2700 MHz, 4 W Avg., 28 V WiMAX RF LDMOS Wideband Integrated Power Amplifier - Data Sheet MMRF2004NB
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 MMRF2010N
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 MMRF2010N
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Aerospace and Defense Solutions Brochure MMRF5300N
98ARH99164A, TO-WB, 9.02x23.62x2.59, Pitch 0.04, 17 Pins MMRF2004NB
MMRF2004NBR1.pdf MMRF2004NB