MMRF2010N: 1030-1090 MHz, 250 W Peak, 50 V RF LDMOS Integrated Power Amplifiers

特性
  • Characterized over 1030-1090 MHz
  • On-chip input (50 Ohm) and interstage matching
  • Single ended
  • Integrated ESD protection
  • Low thermal resistance
  • Integrated quiescent current temperature compensation with enable/disable function
  • RoHS Compliant
特性
  • Driver PA for high power pulse applications
  • IFF and secondary radar
TO-270WB-14, TO-270WBG-14 Package Images
数据手册 (1)
名称/描述Modified Date
MMRF2010N 1030-1090 MHz, 250 W Peak, 50 V Data Sheet (REV 0) PDF (948.7 kB) MMRF2010N [English]21 Oct 2015
应用说明 (4)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907 [English]13 May 2009
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 (REV 1) PDF (111.6 kB) AN1987 [English]12 May 2004
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 (REV 0) PDF (112.8 kB) AN1977 [English]09 Oct 2003
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
手册 (1)
名称/描述Modified Date
RF Aerospace and Defense Solutions Brochure (REV 4.1) PDF (1.6 MB) BR1611 [English]16 May 2016
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
封装信息 (2)
名称/描述Modified Date
98ASA10650D, TO, 17.65x9.25x2.59, Pitch 0.36, 14 Pins (REV B) PDF (72.7 kB) 98ASA10650D [English]18 Mar 2016
98ASA10653D, TO, 17.6x9.3x2.59, Pitch 1.02, 14 Pins (REV B) PDF (77.4 kB) 98ASA10653D [English]26 Feb 2016
支持信息 (1)
名称/描述Modified Date
RF Military High Power Avionics Devices (REV 0) PDF (726.5 kB) MILITARY_HIGH_POWER_RADAR_TRN_SI [English]25 Mar 2016
订购信息
型号状态状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
MMRF2010NR1Active103010905054250250 @ PeakPulse32.5 @ 103059.11.1InputABLDMOS
MMRF2010GNR1Active103010905054250250 @ PeakPulse32.5 @ 103059.11.1InputABLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询MSLPPT (°C)
TO-270 WB-14 LEAD98ASA10650DMPQ - 500 REELPOQ - 500 REELActiveMMRF2010NR1MMRF2010NR1.pdf3260
TO-270 WB-14 GULL98ASA10653DMPQ - 500 REELPOQ - 500 BOXActiveMMRF2010GNR1MMRF2010GNR1.pdf3260
MMRF2010N 1030-1090 MHz, 250 W Peak, 50 V Data Sheet MMRF2010N
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 MMRF2010N
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 MMRF2010N
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Aerospace and Defense Solutions Brochure MMRF5300N
RF Products Selector Guide MMT20303H
RF Military High Power Avionics Devices MMRF2010N
98ASA10650D, TO, 17.65x9.25x2.59, Pitch 0.36, 14 Pins MMRF2010N
MMRF2010NR1.pdf MMRF2010N
98ASA10653D, TO, 17.6x9.3x2.59, Pitch 1.02, 14 Pins MMRF2010N
MMRF2010GNR1.pdf MMRF2010N