MRF6S18060N: 1800-2000 MHz，60 W，26 V GSM/GSM EDGE射频功率LDMOS _ BDTIC 中国领先电子元器件代理商

MRF6S18060N: 1800-2000 MHz，60 W，26 V GSM/GSM EDGE射频功率LDMOS

特性

典型GSM性能：VDD = 26 Vdc，IDQ = 600 mA，连续波输出功率 = 60 W，f = 1990 MHz 功率增益：15 dB 漏极效率：50%
典型GSM EDGE性能：VDD = 26 V，IDQ = 450 mA，平均输出功率 = 25 W，全频段(1805–1880 MHz或1930–1990 MHz) 功率增益：15.5 dB 400 kHz偏移时，频谱增生 = –62 dBc 600 kHz偏移时，频谱增生 = –76 dBc EVM：2% rms
在26 Vdc，1990 MHz，60 W连续波输出功率时，能承受5:1 VSWR
提供串联等效大信号阻抗参数
内部匹配，简便易用
工作电压最高可达32 VDD
集成的ESD保护
可耐225°C高温的塑料封装
N后缀表示无铅焊端。符合RoHS规范。
采用盘卷包装。R1后缀 = 500个，44 mm卷带宽度，13英寸卷盘。

TO-270WB-4, TO-272WB-4 Package Images

数据手册 (1)

名称/描述	Modified Date
MRF6S18060NR1, MRF6S18060NBR1 1800-2000 MHz, 60 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs (REV 4) PDF (781.3 kB) MRF6S18060N [English]	05 Dec 2008

应用说明 (4)

名称/描述	Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]	29 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907 [English]	13 May 2009
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN3789 [English]	12 Mar 2009
Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (8.2 MB) AN3263 [English]	07 Jun 2006

工程设计要点 (1)

名称/描述	Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]	19 Jan 2004

选型工具指南 (1)

名称/描述	Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]	26 May 2016

封装信息 (2)

名称/描述	Modified Date
98ASA10575D, TO, 23.0x8.0x2.59, Pitch 12.0, 4 Pins (REV F) PDF (73.4 kB) 98ASA10575D [English]	17 Mar 2016
98ASA10577D, TO, 17.53x9.02x2.59, Pitch 5.38, 5 Pins (REV F) PDF (75.9 kB) 98ASA10577D [English]	18 Jan 2016

产品变更通知 (1)

名称/描述	Modified Date
MOVE TO270WB TAPE FROM 32MM TO 44MM (REV 0) HTM (5.5 kB) PCN10745 [English]	28 Mar 2005

订购信息

型号	状态	Frequency Min (Min) (MHz)	Frequency Max (Max) (MHz)	供电电压 (Typ) (V)	P1dB (Typ) (dBm)	P1dB (Typ) (W)	输出功率 (Typ) (W) @ Intermodulation Level at Test Signal	测试信号	功率增益 (Typ) (dB) @ f (MHz)	效率 (Typ) (%)	热阻 (Spec)(°C/W)	匹配	类型	模具技术
MRF6S18060NR1	Active	1800	2000	26	47.8	60	60 @ CW	1-Tone	15 @ 1990	50	0.81	I/O	AB	LDMOS
MRF6S18060NBR1	No Longer Manufactured	1800	2000	26	47.8	60	60 @ CW	1-Tone	15 @ 1990	50	0.81	I/O	AB	LDMOS

封装环保信息

封装说明	Outline Version	包装	产品状态	部件编号	化学成分	RoHS / Pb Free中国RoHS查询	MSL	PPT (°C)
TO-270 WB-4	98ASA10577D	MPQ - 500 REELPOQ - 500 REEL	Active	MRF6S18060NR1	MRF6S18060NR1.pdf		3	260
TO-272 WB-4	98ASA10575D	MPQ - 500 REELPOQ - 500 REEL	No Longer Manufactured	MRF6S18060NBR1	MRF6S18060NBR1.pdf		3	260

MRF6S18060NR1, MRF6S18060NBR1 1800-2000 MHz, 60 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs mrf6s18060n

AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n

Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n

Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n

Using Data Sheet Impedances for RF LDMOS Devices mrf1570n

RF Products Selector Guide MMT20303H

MOVE TO270WB TAPE FROM 32MM TO 44MM mrf6s19060n

98ASA10577D, TO, 17.53x9.02x2.59, Pitch 5.38, 5 Pins aft09mp055n

MRF6S18060NR1.pdf MRF6S18060N

98ASA10575D, TO, 23.0x8.0x2.59, Pitch 12.0, 4 Pins MMRF1018N

MRF6S18060NBR1.pdf MRF6S18060N

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