MRF6S20010N: 1600-2200 MHz,10 W,28 V,GSM/GSM EDGE,单载波N-CDMA,双载波W-CDMA射频功率LDMOS

特性
  • 2170 MHz时的典型双频性能:VDD = 28 V,IDQ = 130 mA,输出功率 = 10 W PEP 功率增益:15.5 dB 漏极效率:36% IMD:–34 dBc
  • 典型双载波W–CDMA性能:VDD = 28 V,IDQ = 130 mA,平均输出功率 = 1 W,全频段(2130–2170 MHz),信道带宽= 3.84 MHz。PAR = 8.5 dB @ 0.01% CCDF 功率增益:15.5 dB 漏极效率:15% 10 MHz偏移时的IM3:3.84 MHz信道带宽时为–47 dBc 5 MHz偏移时的ACPR:3.84 MHz信道带宽时为–49 dBc
  • 典型单载波N–CDMA性能:VDD = 28 V,IDQ = 130 mA,平均输出功率 = 1 W,全频段(1930–1990 MHz),IS–95 (导频,同步,寻呼,流量代码8-13)。信道带宽 = 1.2288 MHz。PAR = 9.8 dB @ 0.01% CCDF。 功率增益:15.5 dB 漏极效率:16% 885 kHz偏移时的ACPR:30 kHz带宽时为–60 dBc
  • 典型GSM EDGE性能:VDD = 28 V,IDQ = 130 mA,平均输出功率 = 4 W,全频段(1805–1880 MHz) 功率增益:16 dB 漏极效率:33% EVM:1.3% rms
  • 在28 Vdc,2000 MHz,10 W连续波输出功率时,能承受5:1 VSWR
  • 提供串联等效大信号阻抗参数
  • 内部匹配,简便易用
  • 工作电压最高可达32 VDD
  • 集成的ESD保护
  • 可耐225°C高温的塑料封装
  • 符合RoHS规范。
  • 采用盘卷包装。R1后缀 = 500个,24 mm卷带宽度,13英寸卷盘。
TO-270-2, TO-270G-2 Gull Package Image
数据手册 (1)
名称/描述Modified Date
MRF6S20010NR1, MRF6S20010GNR1 1600-2200 MHz, 10 W, 28 V GSM, GSM EDGE Single N-CDMA 2 x W-CDMA Lateral N-Channel RF... (REV 4) PDF (895.7 kB) MRF6S20010N [English]24 Jan 2014
应用说明 (3)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907 [English]13 May 2009
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN3789 [English]12 Mar 2009
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
封装信息 (2)
名称/描述Modified Date
98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins (REV D) PDF (86.0 kB) 98ASA99301D [English]30 Mar 2016
98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins (REV R) PDF (80.5 kB) 98ASH98117A [English]26 Feb 2016
订购信息
型号状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
MRF6S20010NR1Active160022002840101 @ AVGW-CDMA15.5 @ 2170152.5InputABLDMOS
MRF6S20010GNR1Active160022002840101 @ AVGW-CDMA15.5 @ 2170152.5InputABLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询MSLPPT (°C)
TO-270-2 GULL98ASA99301DMPQ - 500 REELPOQ - 500 REELActiveMRF6S20010GNR1MRF6S20010GNR1.pdf3260
TO-270-298ASH98117AMPQ - 500 REELPOQ - 500 REELActiveMRF6S20010NR1MRF6S20010NR1.pdf3260
MRF6S20010NR1, MRF6S20010GNR1 1600-2200 MHz, 10 W, 28 V GSM, GSM EDGE Single N-CDMA 2 x W-CDMA Lateral N-Channel RF... MRF6S20010N
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins aft09ms031n
MRF6S20010GNR1.pdf MRF6S20010N
98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins aft09ms031n
MRF6S20010NR1.pdf MRF6S20010N