MRF6V2010N: 10-450 MHz,10 W,50 V宽带射频功率LDMOS

特性
  • 220MHz时的典型连续波性能:VDD = 50 V,IDQ = 30 mA,输出功率 = 10 W 功率增益:23.9 dB 漏极效率:62%
  • 在50 Vdc,220 MHz,10 W连续波输出功率时,能承受10:1 VSWR
  • 提供串联等效大信号阻抗参数
  • 工作电压最高可达50 VDD
  • 集成的ESD保护
  • 可耐225°C高温的塑料封装
  • 符合RoHS规范
  • 采用TO-270-2盘卷包装。R1后缀 = 500个,24 mm卷带宽度,13英寸卷盘。
  • 采用TO-272-2盘卷包装。R1后缀 = 500个,44 mm卷带宽度,13英寸卷盘。
TO-270-2, TO-272-2, TO-270G-2 Package Image
数据手册 (1)
名称/描述Modified Date
MRF6V2010N 10 W over 10-450 MHz, 50 V Data Sheet (REV 6) PDF (1.5 MB) MRF6V2010N [English]12 Sep 2016
应用说明 (4)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907 [English]13 May 2009
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN3789 [English]12 Mar 2009
Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (8.2 MB) AN3263 [English]07 Jun 2006
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
手册 (2)
名称/描述Modified Date
Industrial, Scientific and Medical Solutions Brochure (REV 9) PDF (1.2 MB) BR1593 [English]03 Oct 2014
Broadcast Solutions (REV 5) PDF (818.6 kB) BR1607 [English]08 Sep 2011
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
白皮书 (2)
名称/描述Modified Date
Designing with Plastic RF Power Transistors White Paper (REV 2) PDF (894.1 kB) RFPLASTICWP [English]24 Sep 2015
50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications (REV 4) PDF (914.5 kB) 50VRFLDMOSWP [English]08 Sep 2011
封装信息 (3)
名称/描述Modified Date
98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins (REV D) PDF (86.0 kB) 98ASA99301D [English]30 Mar 2016
98ASA99191D, TO, 24.07x11.18x2.59, Pitch 6.35, 2 Pins (REV F) PDF (65.8 kB) 98ASA99191D [English]28 Feb 2016
98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins (REV R) PDF (80.5 kB) 98ASH98117A [English]26 Feb 2016
订购信息
型号状态状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
MRF6V2010NR1Active1045050401010 @ CW1-Tone23.9 @ 220623UnmatchedABLDMOS
MRF6V2010GNR1Active1045050401010 @ CW1-Tone23.9 @ 220623UnmatchedABLDMOS
MRF6V2010NBR1Not Recommended for New Design1045050401010 @ CW1-Tone23.9 @ 220623UnmatchedABLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询MSLPPT (°C)
TO-270-298ASH98117AMPQ - 500 REELPOQ - 500 BOXActiveMRF6V2010NR1MRF6V2010NR1.pdf3260
TO-270-2 GULL98ASA99301DMPQ - 500 REELPOQ - 500 BOXActiveMRF6V2010GNR1MRF6V2010GNR1.pdf3260
TO-272-298ASA99191DMPQ - 500 REELPOQ - 500 BOXNot Recommended for New DesignMRF6V2010NBR1MRF6V2010NBR1.pdf3260
MRF6V2010N 10 W over 10-450 MHz, 50 V Data Sheet mrf6v2010n
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n
Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
Industrial, Scientific and Medical Solutions Brochure mw7ic2425n
Broadcast Solutions mrfe6vp8600h
RF Products Selector Guide MMT20303H
Designing with Plastic RF Power Transistors White Paper mrf1570n
50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications mrfe6vp8600h
98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins aft09ms031n
MRF6V2010NR1.pdf MRF6V2010N
98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins aft09ms031n
MRF6V2010GNR1.pdf MRF6V2010N
98ASA99191D, TO, 24.07x11.18x2.59, Pitch 6.35, 2 Pins mrf6v2010n
MRF6V2010NBR1.pdf MRF6V2010N