MRF6VP41KH: 10-500 MHz,1000 W,50 V宽带射频功率LDMOS

特性
  • 450 MHz时的典型脉冲性能:VDD = 50 V,IDQ = 150 mA,输出功率 = 1000 W峰值(3 W平均值),脉冲宽度 = 100 µsec,占空比 = 20% 功率增益:20 dB漏极效率:64%
  • 在50 Vdc,450 MHz,1000 W峰值功率时,能承受10:1 VSWR
  • 提供串联等效大信号阻抗参数
  • 在充分冷却条件下可以应用于连续波
  • 工作电压最高可达50 VDD
  • 集成的ESD保护
  • 专为推挽操作而设计
  • 增大负栅源电压范围,改善C类放大器运行
  • 符合RoHS规范
  • 采用盘卷包装。R6后缀 = 150个,56 mm卷带宽度,13英寸卷盘。
  • 这些产品包含在恩智浦产品长期供货计划中,自推出后至少保证10年供货。
NI-1230H-4S, NI-1230S-4S Product Images
数据手册 (1)
名称/描述Modified Date
MRF6VP41KHR6, MRF6VP41KHSR6 10-500 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs (REV 6) PDF (1.3 MB) MRF6VP41KH [English]05 Apr 2012
应用说明 (1)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
手册 (1)
名称/描述Modified Date
Industrial, Scientific and Medical Solutions Brochure (REV 9) PDF (1.2 MB) BR1593 [English]03 Oct 2014
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
白皮书 (1)
名称/描述Modified Date
50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications (REV 4) PDF (914.5 kB) 50VRFLDMOSWP [English]08 Sep 2011
封装信息 (2)
名称/描述Modified Date
98ASB16977C, NI-C, 41.15x10.16x4.19, Pitch 13.72, 5 Pins (REV G) PDF (47.5 kB) 98ASB16977C [English]05 Apr 2016
98ARB18247C, NI-C, 32.26x10.16x4.19, Pitch 13.72, 5 Pins (REV H) PDF (44.6 kB) 98ARB18247C [English]23 Feb 2016
订购信息
型号状态状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
MRF6VP41KHSR5Active10500506010001000 @ PeakPulse20 @ 450640.03UnmatchedABLDMOS
MRF6VP41KHR5Active10500506010001000 @ PeakPulse20 @ 450640.03UnmatchedABLDMOS
MRF6VP41KHSR7No Longer Manufactured10500506010001000 @ PeakPulse20 @ 450640.03UnmatchedABLDMOS
MRF6VP41KHR7No Longer Manufactured10500506010001000 @ PeakPulse20 @ 450640.03UnmatchedABLDMOS
MRF6VP41KHR6No Longer Manufactured10500506010001000 @ PeakPulse20 @ 450640.03UnmatchedABLDMOS
MRF6VP41KHSR6No Longer Manufactured10500506010001000 @ PeakPulse20 @ 450640.03UnmatchedABLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询PPT (°C)
NI-123098ASB16977CMPQ - 50 REELPOQ - 50 BOXActiveMRF6VP41KHR5MRF6VP41KHR5.pdf260
Migration Complete. No Longer Manufactured. View PCN and Replacement Part
Migration Complete. No Longer Manufactured. View PCN and Replacement Part
MRF6VP41KHR6MRF6VP41KHR6.pdf260
Migration Complete. No Longer Manufactured. View PCN and Replacement Part
Migration Complete. No Longer Manufactured. View PCN and Replacement Part
MRF6VP41KHR7MRF6VP41KHR7.pdf260
NI-1230S98ARB18247CMPQ - 50 REELPOQ - 50 BOXActiveMRF6VP41KHSR5MRF6VP41KHSR5.pdf260
Migration Complete. No Longer Manufactured. View PCN and Replacement Part
Migration Complete. No Longer Manufactured. View PCN and Replacement Part
MRF6VP41KHSR6MRF6VP41KHSR6.pdf260
Migration Complete. No Longer Manufactured. View PCN and Replacement Part
Migration Complete. No Longer Manufactured. View PCN and Replacement Part
MRF6VP41KHSR7MRF6VP41KHSR7.pdf260
MRF6VP41KHR6, MRF6VP41KHSR6 10-500 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs mrf6vp41kh
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
Industrial, Scientific and Medical Solutions Brochure mw7ic2425n
RF Products Selector Guide MMT20303H
50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications mrfe6vp8600h
98ASB16977C, NI-C, 41.15x10.16x4.19, Pitch 13.72, 5 Pins MMRF1317H
MRF6VP41KHR5.pdf MRF6VP41KH
MRF6VP41KHR6.pdf MRF6VP41KH
MRF6VP41KHR7.pdf MRF6VP41KH
98ARB18247C, NI-C, 32.26x10.16x4.19, Pitch 13.72, 5 Pins MMRF1317H
MRF6VP41KHSR5.pdf MRF6VP41KH
MRF6VP41KHSR6.pdf MRF6VP41KH
MRF6VP41KHSR7.pdf MRF6VP41KH