MRF7P20040H: 2010-2025 MHz，10 W平均值，32 V单载波W-CDMA射频功率LDMOS _ BDTIC 中国领先电子元器件代理商

MRF7P20040H: 2010-2025 MHz，10 W平均值，32 V单载波W-CDMA射频功率LDMOS

特性

典型Doherty单载波W-CDMA性能：VDD = 32 V，IDQA = 150 mA，VGSB = 1.5 Vdc，平均输出功率 = 10 W，IQ幅度削峰，信道带宽= 3.84 MHz，输入信号PAR = 9.9 dB @ 0.01% CCDF。频率 Gps(dB) ηD(%) 输出PAR(dB) ACPR(dBc) 2025 MHz18.242.67.3–34.8
在32 Vdc，2017.5 MHz，50 W连续波输出功率(3 dB过驱额定输出功率)时，能承受5:1 VSWR
3 dB压缩点时，典型连续波输出功率 ≃ 50 W
生产测试在对称Doherty配置中进行
100%经过PAR测试，可保证输出功率能力
提供串联等效大信号阻抗参数和共源S参数
内部匹配，简便易用
集成的ESD保护
增大负栅源电压范围，改善C类放大器运行
专为数字预失真纠错系统而设计
符合RoHS规范
采用盘卷包装。R3后缀 = 250个，56 mm卷带宽度，13英寸卷盘

NI-780-4, NI-780S-4 Package Image

数据手册 (1)

名称/描述	Modified Date
MRF7P20040HR3, MRF7P20040HSR3 2010-2025 MHz, 10 W Avg., 32 V Single W-CDMA Lateral N-Channel RF Power MOSFETs (REV 2) PDF (500.1 kB) MRF7P20040H [English]	10 Dec 2010

应用说明 (1)

名称/描述	Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]	29 Apr 2014

工程设计要点 (1)

名称/描述	Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]	19 Jan 2004

选型工具指南 (1)

名称/描述	Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]	26 May 2016

封装信息 (2)

名称/描述	Modified Date
98ASA10718D, NI-C, 19.81x9.34x3.75, Pitch 4.44, 5 Pins (REV C) PDF (42.9 kB) 98ASA10718D [English]	15 Aug 2016
98ASA10793D (REV A) PDF (47.9 kB) 98ASA10793D [English]	21 Mar 2016

订购信息

型号	状态	Frequency Min (Min) (MHz)	Frequency Max (Max) (MHz)	供电电压 (Typ) (V)	P1dB (Typ) (dBm)	P1dB (Typ) (W)	输出功率 (Typ) (W) @ Intermodulation Level at Test Signal	测试信号	功率增益 (Typ) (dB) @ f (MHz)	效率 (Typ) (%)	热阻 (Spec)(°C/W)	匹配	类型	模具技术
MRF7P20040HSR3	Active	2010	2025	32	45.4	35	10 @ AVG	W-CDMA	18.2 @ 2025	42.6	2.11	I/O	AB, C	LDMOS
MRF7P20040HR3	No Longer Manufactured	2010	2025	32	45.4	35	10 @ AVG	W-CDMA	18.2 @ 2025	42.6	2.11	I/O	AB, C	LDMOS
MRF7P20040HSR5	No Longer Manufactured	2010	2025	32	45.4	35	10 @ AVG	W-CDMA	18.2 @ 2025	42.6	2.11	I/O	AB, C	LDMOS
MRF7P20040HR5	No Longer Manufactured	2010	2025	32	45.4	35	10 @ AVG	W-CDMA	18.2 @ 2025	42.6	2.11	I/O	AB, C	LDMOS

封装环保信息

封装说明	Outline Version	包装	产品状态	部件编号	化学成分	RoHS / Pb Free中国RoHS查询	PPT (°C)
NI-780HS-4	98ASA10718D	MPQ - 250 REELPOQ - 250 REEL	Active	MRF7P20040HSR3	MRF7P20040HSR3.pdf		260
NI-780HS-4	98ASA10718D		No Longer Manufactured	MRF7P20040HSR5	MRF7P20040HSR5.pdf
NI 780H-4	98ASA10793D		No Longer Manufactured	MRF7P20040HR3	MRF7P20040HR3.pdf		260
NI 780H-4	98ASA10793D		No Longer Manufactured	MRF7P20040HR5	MRF7P20040HR5.pdf

MRF7P20040HR3, MRF7P20040HSR3 2010-2025 MHz, 10 W Avg., 32 V Single W-CDMA Lateral N-Channel RF Power MOSFETs mrf7p20040h

AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H

Using Data Sheet Impedances for RF LDMOS Devices mrf1570n

RF Products Selector Guide MMT20303H

98ASA10718D, NI-C, 19.81x9.34x3.75, Pitch 4.44, 5 Pins MMRF1310H

MRF7P20040HSR3.pdf MRF7P20040H

MRF7P20040HSR5.pdf MRF7P20040H

98ASA10793D MMRF1310H

MRF7P20040HR3.pdf MRF7P20040H

MRF7P20040HR5.pdf MRF7P20040H

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