MRF8P20100H: 1805-2025 MHz，20 W平均值，28 V单载波W-CDMA射频功率LDMOS

典型Doherty单载波W-CDMA性能：VDD = 28 V，IDQA = 400 mA，VGSB = 1.3 Vdc，平均输出功率 = 20 W，IQ幅度削峰，信道带宽 = 3.84 MHz，输入信号PAR = 9.9 dB @ 0.01% CCDF。频率 Gps(dB) ηD(%) 输出PAR(dB) ACPR(dBc) 2025 MHz16.044.37.8–33.5
典型Doherty单载波W-CDMA性能：VDD = 28 V，IDQA = 400 mA，VGSB = 1.3 Vdc，平均输出功率 = 20 W，IQ幅度削峰，信道带宽 = 3.84 MHz，输入信号PAR = 9.9 dB @ 0.01% CCDF。频率 Gps(dB) ηD(%) 输出PAR(dB) ACPR(dBc) 1880 MHz16.243.57.6–30.8 1900 MHz16.143.47.6–32.6 1920 MHz15.842.97.6–34.6
典型GSM EDGE性能：VDD = 28 V，IDQA = IDQB = 330 mA，平均输出功率= 42 W 频率 Gps(dB) ηD(%) SR1@ 400 kHz(dBc) SR2@ 600 kHz(dBc) EVM(% rms) 1805 MHz17.143.8–58.4–74.43.0 1840 MHz17.342.4–60.0–75.52.6 1880 MHz17.141.7–60.5–75.32.4
生产测试在对称Doherty配置中进行
100%经过PAR测试，可保证输出功率能力
提供串联等效大信号阻抗参数和共源S参数
内部匹配，简便易用
集成的ESD保护
增大负栅源电压范围，改善C类放大器运行
专为数字预失真纠错系统而设计
符合RoHS规范
采用盘卷包装。R3后缀 = 250个，56 mm卷带宽度，13英寸卷盘。

名称/描述	Modified Date
MRF8P20100HR3, MRF8P20100HSR3 1805-2025 MHz, 20 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs (REV 0) PDF (1.2 MB) MRF8P20100H [English]	12 Apr 2010

名称/描述	Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]	29 Apr 2014

名称/描述	Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]	19 Jan 2004

名称/描述	Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]	26 May 2016

名称/描述	Modified Date
98ASA10718D, NI-C, 19.81x9.34x3.75, Pitch 4.44, 5 Pins (REV C) PDF (42.9 kB) 98ASA10718D [English]	15 Aug 2016
98ASA10793D (REV A) PDF (47.9 kB) 98ASA10793D [English]	21 Mar 2016

型号	状态	Frequency Min (Min) (MHz)	Frequency Max (Max) (MHz)	供电电压 (Typ) (V)	P1dB (Typ) (dBm)	P1dB (Typ) (W)	输出功率 (Typ) (W) @ Intermodulation Level at Test Signal	测试信号	功率增益 (Typ) (dB) @ f (MHz)	效率 (Typ) (%)	热阻 (Spec)(°C/W)	匹配	类型	模具技术
MRF8P20100HSR3	Active	1805	2025	28	48.9	78	20 @ AVG	W-CDMA	16 @ 2025	44.3	0.88	I/O	AB, C	LDMOS
MRF8P20100HR3	No Longer Manufactured	1805	2025	28	48.9	78	20 @ AVG	W-CDMA	16 @ 2025	44.3	0.88	I/O	AB, C	LDMOS
MRF8P20100HSR5	No Longer Manufactured	1805	2025	28	48.9	78	20 @ AVG	W-CDMA	16 @ 2025	44.3	0.88	I/O	AB, C	LDMOS
MRF8P20100HR5	No Longer Manufactured	1805	2025	28	48.9	78	20 @ AVG	W-CDMA	16 @ 2025	44.3	0.88	I/O	AB, C	LDMOS

封装说明	Outline Version	包装	产品状态	部件编号	化学成分	PPT (°C)
NI-780HS-4	98ASA10718D	MPQ - 250 REELPOQ - 250 REEL	Active	MRF8P20100HSR3	MRF8P20100HSR3.pdf	260
NI-780HS-4	98ASA10718D		Migration Complete. No Longer Manufactured. View PCN and Replacement Part Migration Complete. No Longer Manufactured. View PCN and Replacement Part	MRF8P20100HSR5	MRF8P20100HSR5.pdf	260
NI 780H-4	98ASA10793D	MPQ - 250 REELPOQ - 250 REEL	No Longer Manufactured	MRF8P20100HR3	MRF8P20100HR3.pdf	260
NI 780H-4	98ASA10793D		No Longer Manufactured	MRF8P20100HR5	MRF8P20100HR5.pdf	260