MRF8P20140WH: 1880-2025 MHz,24 W平均值,28 V单载波W-CDMA射频功率LDMOS

特性
  • 专为宽瞬时带宽应用而设计。VBWres ≃ 240 MHz。
  • 专为需要160 MHz信号带宽的宽频应用而设计
  • 生产测试在对称Doherty配置中进行
  • 100%经过PAR测试,可保证输出功率能力
  • 提供大信号负载牵引参数和共源S参数
  • 内部匹配,简便易用
  • 集成的ESD保护
  • 增大负栅源电压范围,改善C类放大器运行
  • 专为数字预失真纠错系统而设计
  • 符合RoHS规范
  • 采用NI-780-4盘卷包装。R3后缀 = 250个,56 mm卷带宽度,13英寸卷盘。
  • 采用NI-780S-4盘卷包装。R3后缀 = 250个,32 mm卷带宽度,13英寸卷盘。
RF ISOs NI-780H-4L, NI-780S-4L NI-780GS-4L Package Image
数据手册 (1)
名称/描述Modified Date
MRF8P20140WHR3, MRF8P20140WHSR3, MRF8P20140WGHSR3 1880-2025 MHz, 24 W Avg., 28 V Single W-CDMA Lateral N-Channel RF... (REV 1) PDF (471.5 kB) MRF8P20140WH [English]15 Nov 2013
应用说明 (1)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
封装信息 (3)
名称/描述Modified Date
98ASA10718D, NI-C, 19.81x9.34x3.75, Pitch 4.44, 5 Pins (REV C) PDF (42.9 kB) 98ASA10718D [English]15 Aug 2016
98ASA10793D (REV A) PDF (47.9 kB) 98ASA10793D [English]21 Mar 2016
98ASA00238D, NI-C, 20.57x9.78x3.81, Pitch 8.88, 5 Pins (REV C) PDF (47.2 kB) 98ASA00238D [English]26 Feb 2016
支持信息 (1)
名称/描述Modified Date
MRF8P20165WH and MRF8P20165WH/HS: LDMOS Transistors Cover Full Wireless Bands (REV 1) PDF (587.7 kB) MRF8P20140WH_20165WH_TRN_SI [English]29 Apr 2011
订购信息
型号状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
MRF8P20140WGHSR3Active188020252851.514024 @ AVGW-CDMA16 @ 192043.70.68I/OAB, CLDMOS
MRF8P20140WHR3Active188020252851.514024 @ AVGW-CDMA16 @ 192043.70.68I/OAB, CLDMOS
MRF8P20140WHSR3Active188020252851.514024 @ AVGW-CDMA16 @ 192043.70.68I/OAB, CLDMOS
MRF8P20140WHR5No Longer Manufactured188020252851.514024 @ AVGW-CDMA16 @ 192043.70.68I/OAB, CLDMOS
MRF8P20140WHSR5No Longer Manufactured188020252851.514024 @ AVGW-CDMA16 @ 192043.70.68I/OAB, CLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询PPT (°C)
NI-780GS-4L98ASA00238DMPQ - 250 REELPOQ - 250 REELActiveMRF8P20140WGHSR3MRF8P20140WGHSR3.pdf260
NI 780H-498ASA10793DMPQ - 250 REELPOQ - 250 REELActiveMRF8P20140WHR3MRF8P20140WHR3.pdf260
Migration Complete. No Longer Manufactured. View PCN and Replacement Part
Migration Complete. No Longer Manufactured. View PCN and Replacement Part
MRF8P20140WHR5MRF8P20140WHR5.pdf260
NI-780HS-498ASA10718DMPQ - 250 REELPOQ - 250 REELActiveMRF8P20140WHSR3MRF8P20140WHSR3.pdf260
Migration Complete. No Longer Manufactured. View PCN and Replacement Part
Migration Complete. No Longer Manufactured. View PCN and Replacement Part
MRF8P20140WHSR5MRF8P20140WHSR5.pdf260
MRF8P20140WHR3, MRF8P20140WHSR3, MRF8P20140WGHSR3 1880-2025 MHz, 24 W Avg., 28 V Single W-CDMA Lateral N-Channel RF... MRF8P20140WH
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
MRF8P20165WH and MRF8P20165WH/HS: LDMOS Transistors Cover Full Wireless Bands MRF8P20165WH
98ASA00238D, NI-C, 20.57x9.78x3.81, Pitch 8.88, 5 Pins AFT26P100-4WS
MRF8P20140WGHSR3.pdf MRF8P20140WH
98ASA10793D MMRF1310H
MRF8P20140WHR3.pdf MRF8P20140WH
MRF8P20140WHR5.pdf MRF8P20140WH
98ASA10718D, NI-C, 19.81x9.34x3.75, Pitch 4.44, 5 Pins MMRF1310H
MRF8P20140WHSR3.pdf MRF8P20140WH
MRF8P20140WHSR5.pdf MRF8P20140WH