MRF8S9170N: 920-960 MHz,50 W平均值,28 V单载波W-CDMA射频功率LDMOS

特性
  • 典型单载波W-CDMA性能:VDD = 28 V,IDQ = 1000 mA,平均输出功率 = 50 W,IQ幅度削峰,信道带宽 = 3.84 MHz,输入信号PAR = 7.5 dB @ 0.01% CCDF。 频率 Gps(dB) ηD(%) 输出PAR(dB) ACPR(dBc) 920 MHz19.336.56.0–36.6 940 MHz19.136.16.1–36.7 960 MHz18.936.06.0–36.1
  • 在32 Vdc,940 MHz,250 W连续波输出功率(自额定输出功率3 dB输入过驱)时,能承受10:1 VSWR
  • 1 dB压缩点时,典型连续波输出功率 ≃ 177 W
  • 100%经过PAR测试,可保证输出功率容量
  • 提供串联等效大信号阻抗参数和共源S参数
  • 内部匹配,简便易用
  • 集成的ESD保护
  • 增大负栅源电压范围,改善C类放大器运行
  • 专为数字预失真纠错系统而设计
  • 为Doherty应用进行了优化
  • 可耐225°C高温的塑料封装
  • 符合RoHS规范
  • 采用盘卷包装。R3后缀 = 250个,32 mm卷带宽度,13英寸卷盘。
OM-780-2 Package Image
数据手册 (1)
名称/描述Modified Date
MRF8S9170NR3 920-960 MHz, 50 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET (REV 1) PDF (469.3 kB) MRF8S9170N [English]19 May 2010
应用说明 (3)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907 [English]13 May 2009
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN3789 [English]12 Mar 2009
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
封装信息 (1)
名称/描述Modified Date
98ASA10831D, OMNI, 20.57x9.78x3.81, Pitch 9.96, 2 Pins (REV C) PDF (68.6 kB) 98ASA10831D [English]22 Mar 2016
订购信息
型号状态状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
MRF8S9170NR3Active9209602852.517750 @ AVGW-CDMA19.3 @ 92036.50.38I/OABLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询MSLPPT (°C)
OM780-2 PLASTICS98ASA10831DMPQ - 250 REELPOQ - 250 REELActiveMRF8S9170NR3MRF8S9170NR3.pdf3260
MRF8S9170NR3 920-960 MHz, 50 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET mrf8s9170n
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
98ASA10831D, OMNI, 20.57x9.78x3.81, Pitch 9.96, 2 Pins MMRF1017N
MRF8S9170NR3.pdf MRF8S9170N