MRFE6VS25N: 1.8-2000 MHz,25 W,50 V LDMOS宽带射频功率晶体管

特性
  • 宽工作频率范围
  • 非常耐用
  • 未匹配,可支持非常宽的频段
  • 集成的稳定性增强功能
  • 低热阻
  • 扩展的ESD保护电路
  • 符合RoHS规范
  • 采用盘卷包装。R1后缀 = 500个,32 mm卷带宽度,13英寸卷盘。
TO-270-2, TO-270G-2 Gull Package Image
数据手册 (1)
名称/描述Modified Date
MRFE6VS25NR1, MRFE6VS25GNR1 1.8-2000 MHz, 25 W, 50 V Wideband RF Power LDMOS Transistors - Data Sheet (REV 1) PDF (1.7 MB) MRFE6VS25N [English]18 Dec 2012
应用说明 (3)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907 [English]13 May 2009
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN3789 [English]12 Mar 2009
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
简介 (1)
名称/描述Modified Date
RFWIDEBNDFS: 50V Rugged Wideband LDMOS Transistors – Fact Sheet (REV 0) PDF (337.4 kB) RFWIDEBNDFS [English]18 Jun 2012
手册 (1)
名称/描述Modified Date
RF Solutions for Commercial Aerospace (REV 2) PDF (1.8 MB) BR1608 [English]04 Sep 2015
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
白皮书 (1)
名称/描述Modified Date
Designing with Plastic RF Power Transistors White Paper (REV 2) PDF (894.1 kB) RFPLASTICWP [English]24 Sep 2015
封装信息 (2)
名称/描述Modified Date
98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins (REV D) PDF (86.0 kB) 98ASA99301D [English]30 Mar 2016
98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins (REV R) PDF (80.5 kB) 98ASH98117A [English]26 Feb 2016
支持信息 (1)
名称/描述Modified Date
50V Rugged Wideband LDMOS Transistors (REV 0) PDF (778.4 kB) 50VWIDEBAND_TRN_SI [English]15 Jun 2012
印刷电路板
订购信息
型号状态状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
MRFE6VS25NR1Active1.8200050442525 @ CWCW25.5 @ 51274.51.2UnmatchedABLDMOS
MRFE6VS25GNR1Active1.8200050442525 @ CWCW25.5 @ 51274.71.2UnmatchedABLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询MSLPPT (°C)
TO-270-2 GULL98ASA99301DMPQ - 500 REELPOQ - 500 REELActiveMRFE6VS25GNR1MRFE6VS25GNR1.pdf3260
TO-270-298ASH98117AMPQ - 500 REELPOQ - 500 REELActiveMRFE6VS25NR1MRFE6VS25NR1.pdf3260
MRFE6VS25NR1, MRFE6VS25GNR1 1.8-2000 MHz, 25 W, 50 V Wideband RF Power LDMOS Transistors - Data Sheet mrfe6vs25n
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RFWIDEBNDFS: 50V Rugged Wideband LDMOS Transistors – Fact Sheet mrfe6vs25n
RF Solutions for Commercial Aerospace mrfe6vs25n
RF Products Selector Guide MMT20303H
Designing with Plastic RF Power Transistors White Paper mrf1570n
50V Rugged Wideband LDMOS Transistors mrfe6vs25n
MRFE6VS25N 1.8-30 MHz Broadband PCB DXF file MRFE6VS25N
MRFE6VS25N 1030 MHz Narrowband PCB DXF file MRFE6VS25N
MRFE6VS25N 30-512 MHz Broadband PCB DXF file MRFE6VS25N
MRFE6VS25N 512 MHz Narrowband PCB DXF file MRFE6VS25N
98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins aft09ms031n
MRFE6VS25GNR1.pdf MRFE6VS25N
98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins aft09ms031n
MRFE6VS25NR1.pdf MRFE6VS25N