MW7IC915N: 728-960 MHz,1.6 W平均值,28 V单载波W-CDMA LDMOS宽带射频集成功率放大器

特性
  • 典型单载波W-CDMA性能:VDD = 28 V,IDQ1 = 52 mA,IDQ2 = 134 mA,平均输出功率 = 1.6 W,IQ幅度削峰,信道带宽 = 3.84 MHz,输入信号PAR = 7.5 dB @ 0.01% CCDF。 频率 Gps(dB) 功率附加效率(%) ACPR(dBc) 865 MHz37.917.1–50.4 880 MHz38.017.4–50.6 895 MHz37.817.5–51.3
  • 在32 Vdc,880 MHz,23.5 W连续波输出功率(自额定输出功率3 dB输入过驱)时,能承受10:1 VSWR
  • 在5:1 VSWR下保持稳定。在30至41.5 dBm连续波输出功率时,所有杂散低于–60 dBc。
  • 1 dB压缩点时,典型连续波输出功率≃ 15.5 W
特性
  • 典型单载波W-CDMA性能:VDD = 28 V,IDQ1 = 50 mA,IDQ2 = 144 mA,平均输出功率 = 1.6 W,IQ幅度削峰,信道带宽 = 3.84 MHz,输入信号PAR = 7.5 dB @ 0.01% CCDF。 频率 Gps(dB) 功率附加效率(%) ACPR(dBc) 728 MHz37.817.2–49.5 748 MHz37.817.3–50.5 768 MHz37.717.3–51.4
  • 提供串联等效大信号阻抗参数和共源S参数
  • 片上匹配(50 Ohm隔直输入)
  • 集成静态电流温度补偿,具有启用/禁用功能
  • 集成的ESD保护
  • 符合RoHS规范
  • 采用盘卷包装。T1后缀 = 1000个,16 mm卷带宽度,13英寸卷盘。
PQFN 8x8 Package Image
数据手册 (1)
名称/描述Modified Date
MW7IC915NT1 728-960 MHz, 1.6 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier - Data Sheet (REV 2) PDF (625.4 kB) MW7IC915N [English]16 Dec 2013
应用说明 (4)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
PCB Layout Guidelines for PQFN/QFN Style Packages Requiring Thermal Vias for Heat Dissipation - AN3778 (REV 0) PDF (632.0 kB) AN3778 [English]26 Feb 2010
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 (REV 1) PDF (111.6 kB) AN1987 [English]12 May 2004
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 (REV 0) PDF (112.8 kB) AN1977 [English]09 Oct 2003
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
白皮书 (1)
名称/描述Modified Date
Advances in Airfast® RFICs White Paper (REV 0) PDF (149.2 kB) AIRFASTWBFWP [English]15 May 2015
封装信息 (1)
名称/描述Modified Date
98ASA10760D, PQFN-EP, 8.0x8.0x2.1, Pitch 0.8, 24 Pins (REV B) PDF (44.4 kB) 98ASA10760D [English]21 Mar 2016
印刷电路板
订购信息
型号状态状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
MW7IC915NT1Active8658952841.915.51.6 @ AVGW-CDMA38 @ 88017.43.2InputABLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询MSLPPT (°C)
PWR QFN 24 8*8*2.1P0.898ASA10760DMPQ - 1000 REELPOQ - 1000 REELActiveMW7IC915NT1MW7IC915NT1.pdf3260
MW7IC915NT1 728-960 MHz, 1.6 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier - Data Sheet MW7IC915N
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
PCB Layout Guidelines for PQFN/QFN Style Packages Requiring Thermal Vias for Heat Dissipation - AN3778 MMG3006NT1
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 MMRF2010N
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 MMRF2010N
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
Advances in Airfast® RFICs White Paper MW7IC2725N
MW7IC915NT1 CAD DXF File MW7IC915N
98ASA10760D, PQFN-EP, 8.0x8.0x2.1, Pitch 0.8, 24 Pins MMRF2006N
MW7IC915NT1.pdf MW7IC915N