OM7885：BGU8M1 LTE LNA evaluation board
The BGU8M1 LTE LNA evaluation board simplifies the evaluation of the BGU8M1 LNA for the LTE application. The evaluation board enables testing of the device performance and requires no additional support circuitry. The board is fully assembled with the BGU8M1, the input series inductor and a decoupling capacitor. The board is supplied with two SMA connectors for input and output connection to RF test equipment. The BGU8M1 can operate from a 1.5 V to 3.1 V single supply and consumes about 5 mA.
特性- The BGU8M1 is optimized for 1805 MHz to 2200 MHz
- Noise figure (NF) = 0.9 dB
- Gain = 13 dB
- High input 1 dB compression point of -2 dBm
- High out of band IP3i of 6 dBm
- Supply voltage 1.5 V to 3.1 V
- Optimized performance at low supply current of 5 mA
- Power-down mode current consumption < 1 µA
- Integrated temperature stabilized bias for easy design
- Requires only one input matching inductor and one supply decoupling capacitor
- Input and output DC decoupled
- ESD protection on all pins (HBM > 2 kV)
- Integrated matching for the output
- 1.1 mm x 0.7 mm x 0.37 mm; 0.4 mm pitch: SOT1232
- 180 GHz transit frequency - SiGe:C technology
简介ContentBGU8M1 LNA evaluation board in ESD safe packing ApplicationsLNA for LTE in smart phones, feature phones and tablet applications | 功能框图 产品图片
|
文档资料
订购信息
| 型号 | 订购码 (12NC) | 可订购的器件编号 | 产品状态 |
|---|
| OM7885/BGU8M1/LNA | 9340 686 49598 | OM7885/BGU8M1/LNUL | Active |
相关产品
| 型号 | 描述 | 产品状态 |
|---|
| BGU8M1 | SiGe:C Low Noise Amplifier MMIC for LTE | Production |
Software
