OM7897:BGU8L1UK LTE LNA evaluation board

The BGU8L1UK LTE LNA evaluation board simplifies the evaluation of the BGU8L1UK LNA for the LTE application. The evaluation board enables testing of the device performance and requires no additional support circuitry. The board is fully assembled with the BGU8L1UK, the input series inductor, input DC blocking capacitor and a decoupling capacitor. The board is supplied with two SMA connectors for input and output connection to RF test equipment. The BGU8L1UK can operate from a 1.5 V to 3.1 V single supply and consumes about 4.6 mA.

特性
  • The BGU8L1UK is optimized for 728 MHz to 960 MHz: Noise figure (NF) = 0.70 dB Gain = 16 dB High input 1 dB compression point of -6 dBm High out of band IP3i of 2 dBm Supply voltage 1.5 V to 3.1 V Optimized performance at low 4.6 mA supply current Power-down mode current consumption < 1 µA Integrated temperature stabilized bias for easy design Requires only one input matching inductor, input DC blocking capacitor and one supply decoupling capacitor Input and output DC decoupled ESD protection on all pins (HBM > 2 kV) Integrated matching for the output 0.65 mm x 0.44 mm x 0.2 mm; 0.22 mm pitch 180 GHz transit frequency - SiGe:C technology
简介
Content:
Applications:
功能框图
BGU8x1UK LNA diagram
产品图片

OM7897: BGU8L1UK LTE LNA evaluation board

文档资料
档案名称标题类型格式日期
GNSS_LNA_EVB_WLCSP-F_FR4_LTE_Jammer_Immunity_v2OM7897_8_9 board layout fileDesign supportzip2014-11-06
BGU8L1UK_Spar_and_NoiseBGU8L1UK S-parameter and NoiseS-parameterzip2014-11-06
订购信息
型号订购码 (12NC)可订购的器件编号产品状态
OM7897/BGU8L1UK9340 691 55598OM7897/BGU8L1UKULActive
相关产品
型号描述产品状态
BGU8L1UKSiGe:C Low Noise Amplifier MMIC for LTEProduction
OM7899
OM7897
OM7897_8_9 board layout file OM7899
BGU8L1UK S-parameter and Noise BGU8L1UK